SMUN5114T1G Discrete Semiconductor Products |
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Allicdata Part #: | SMUN5114T1GOSTR-ND |
Manufacturer Part#: |
SMUN5114T1G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | SMUN5114T1G Datasheet/PDF |
Quantity: | 9000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04305 |
6000 +: | $ 0.03744 |
15000 +: | $ 0.03183 |
30000 +: | $ 0.02995 |
75000 +: | $ 0.02808 |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | MUN51**T |
Supplier Device Package: | SC-70-3 (SOT323) |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 202mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Application Field and Working Principle of SMUN5114T1G
The SMUN5114T1G is a single pre-biased transistor with many applications. This type of transistor is often referred to as a “BJT”, which stands for bipolar junction transistor. This particular device is part of the NPN family, meaning that it’s made up of two p-type layers, each separated by one n-type layer.
Applications of SMUN5114T1G
The SMUN5114T1G transistor is often used in power amplifiers, impedance and frequency matching, oscillators, signal conditioning, signal detection and switching. This type of transistor is also very commonly used as an amplifier, particularly in radio frequency (RF) circuits. Other applications of the SMUN5114T1G are in the medical field, where it is used for bio-implants, body monitoring, and EEG analysis.
Working Principle of the SMUN5114T1G
The SMUN5114T1G transistor functions as an electronic controlled switch, allowing for current to flow in one direction when an appropriate voltage level is applied. This type of transistor is also known as a “current regulator”, as it can control the amount of current flowing from the collector to the emitter. In a standard NPN transistor, the current flows from the emitter to the collector, while in the SMUN5114T1G transistor the current is regulated in the opposite direction (from the collector to the emitter).
The emitter-base junction of the SMUN5114T1G is forward-biased and the current flows through this region. This current enters the base, which can be thought of as a sort of "gate"; when the appropriate current level is reached, it switches on the transistor, causing the collector-emitter current to flow. The voltage applied to the base determines the collector-emitter current, or the current flowing through the transistor.
Conclusion
The SMUN5114T1G transistor is an incredibly useful and versatile device, with wide-ranging applications in the fields of power amplifiers, RF circuits, medical implants, and signal detection. Furthermore, understanding the working principle of the SMUN5114T1G allows engineers to leverage this device to its full potential.
The specific data is subject to PDF, and the above content is for reference
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