Allicdata Part #: | SMUN2111T3G-ND |
Manufacturer Part#: |
SMUN2111T3G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 230MW SC59 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | SMUN2111T3G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03183 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 230mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
Base Part Number: | MUN2111 |
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Bipolar junction transistors (BJTs) are three-terminal devices that are commonly used in amplification and switching circuits. The SMUN2111T3G is a single, pre-biased type of bipolar junction transistor. The primary benefit to using a single, pre-biased BJT is that it can be used in many applications with minimal effort on the part of the circuit designer.
The SMUN2111T3G is a pre-biased PNP BJT with 3 terminals: Emitter (E), Base (B) and Collector (C). It is also known as an NPN BJT with the collector and base terminals swapped. The number 2111 in the part number refers to the transistor\'s package type, which in this case is a T3 (3 pins).
The SMUN2111T3G has a maximum collector current of 230 mA, and a maximum collector-emitter voltage of 60V. It also has a low input capacitance of 7.5 pF. The device has an operating frequency range of up to 300 kHz, and a minimal base drive current of 5 mA. The SMUN2111T3G can also withstand up to 4W power dissipation.
The SMUN2111T3G is a single, pre-biased transistor, meaning that the base-emitter voltage (V BE ) of the device is predetermined by the manufacturer. This predefined V BE ensures that the device is always in the ‘on’ or ‘active’ state, and can be used in applications that require instant switching, such as relays, digital logic circuits, etc. The V BE is typically set to 1.4V for the SMUN2111T3G.
In terms of its working principle, the SMUN2111T3G is an NPN transistor, meaning that current flow can be controlled by applying a positive voltage to its base. Electrons are drawn from the emitter to the base, and then “released” into the collector, resulting in current flow between the emitter and collector. The extent to which the current flow is regulated depends on the relative “strength” of the base current.
The SMUN2111T3G is a versatile transistor with a large range of applications. It is commonly used in audio and video circuits, switch devices, light controllers, and in low power logic circuits. The pre-biased nature of the device makes it particularly useful for applications that require instant switching or sensing, such as relays and light switches.
The SMUN2111T3G is also frequently used in control circuits for motor drives, as the predefined V BE ensures that the device is in the correct “on” state, even when power is switched off and on again. This makes it ideal for applications that require a regulated current flow, such as motor control circuits.
In summation, the SMUN2111T3G is a versatile and dependable single, pre-biased type of bipolar junction transistor. It has a wide range of applications, including audio and video circuits, switch devices, light controllers, low power logic circuits, relays, and more. It is especially useful in applications that require instant switching or sensing. The device’s versatile nature, predefined V BE , and low input capacitance make it an ideal choice for many circuit requirements.
The specific data is subject to PDF, and the above content is for reference
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