Allicdata Part #: | SPD02N50C3INTR-ND |
Manufacturer Part#: |
SPD02N50C3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 560V 1.8A DPAK |
More Detail: | N-Channel 560V 1.8A (Tc) 25W (Tc) Surface Mount PG... |
DataSheet: | SPD02N50C3 Datasheet/PDF |
Quantity: | 1000 |
Series: | CoolMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 560V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The SPD02N50C3 is a high-voltage, high-speed, high-performance N-Channel Power Transistor commonly used in power applications. It is built with an advanced trench technology to provide low Rds(on) and low gate charges. The device features an internalGate-Source protection to prevent over-voltage damage. It also offers fast switching and excellent temperature stability for reliable operation.
The SPD02N50C3 is used in a wide variety of applications, including power management, motor controls, and switching power supplies. The transistor is also used in such diverse applications as motor control, industrial automation, and automotive systems.
The working principle of the SPD02N50C3 is based on the principles of operation of field-effect transistors (FETs). In FETs, the current flow between the drain and source is controlled by the voltage applied to the gate. The SPD02N50C3 is a type of MOSFET (metal-oxide semiconductor field-effect transistor), which uses an insulated gate to control the conductivity of a semiconductor material. The gate voltage is applied between the gate and source terminals, and the potential difference between the gate and source results in the formation of a gate-source capacitance.
When the gate-source voltage is sufficient, the inversion layer formed in the vicinity of the gate allows the current to flow from the source to the drain. The MOSFET then acts as a switch and allows a current to flow between the two terminals. The on-resistance of the MOSFET (commonly referred to as Rds(on)) is determined by the gate-source voltage, channel doping, and channel width. The SPD02N50C3 features a low on-resistance of only 0.125Ω, making it an ideal choice for low-power applications.
The SPD02N50C3 also offers high-temperature stability, with a maximum operating temperature of 175°C. This makes it suitable for use in high-temperature environments, where other types of power transistors may not function properly. Its fast switching time of 0.8µs allows for better overall power efficiency and higher system performance.
In conclusion, the SPD02N50C3 is a high-performance N-Channel PowerTransistor with a low Rds(on) and low gate charge. It offers fast switching, high-temperature stability, and excellent performance in a wide variety of applications. It is the perfect choice for low-power applications where speed and reliability are essential.
The specific data is subject to PDF, and the above content is for reference
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