Allicdata Part #: | SPD04N60S5BTMA1-ND |
Manufacturer Part#: |
SPD04N60S5BTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 4.5A TO252 |
More Detail: | N-Channel 600V 4.5A (Tc) 50W (Tc) Surface Mount PG... |
DataSheet: | SPD04N60S5BTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 22.9nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 580pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SPD04N60S5BTMA1 is a powerful N-channel MOSFET device that is an ideal choice for medium to high power applications. It is a single-gate device, and it has an ultra-high drain current of up to 600 A and a maximum drain voltage of 60 V. The device is also equipped with fast switching characteristics and is capable of providing superior performance in a wide variety of applications.
The SPD04N60S5BTMA1 MOSFET is mainly used in applications requiring high power or efficiency and in applications where the device size is critical. The device is suitable for use in switch-mode power supplies, high-frequency converters, AC/DC converters, and dc-dc converters. The device is also ideal for reverse battery protection, AC main switch and industrial motor control.
The primary benefit of using the SPD04N60S5BTMA1 is that it offers superior performance without sacrificing power efficiency. The device provides a low on-state resistance of only 2.6 mΩ. This allows the device to have a very low power loss even when operating at high current. The device also utilizes a high transconductance of 110S, which helps to minimize gate-source capacitance, resulting in improved switching performance.
The working principle behind the SPD04N60S5BTMA1 is based on the basic MOSFET design. When a gate voltage is applied to the device, the internal charge Carriers are switched on, allowing current to flow from the drain to the source. The device characteristics and performance can be adjusted by changing the gate voltage.
The SPD04N60S5BTMA1 is a reliable and robust device that provides superior performance in a range of power applications. The device is suitable for both commercial and industrial applications, and it can be easily integrated into any system. The device provides a high drain-source current capability, fast switching speeds and excellent efficiency, making it an ideal choice for demanding applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SPD08-200-RB | 3M | 8.79 $ | 427 | CONN EDGE DUAL FMALE 200P... |
SPD08-100-L-RB-TR | 3M | 5.66 $ | 250 | CONN EDGE DUAL FMALE 100P... |
SPD08-120-L-RB-TR | 3M | 6.2 $ | 750 | CONN EDGE DUAL FMALE 120P... |
SPD08-060-RB-TR | 3M | -- | 400 | CONN EDGE DUAL FMALE 60PO... |
SPD08-020-RB-TR | 3M | 2.39 $ | 800 | CONN EDGE DUAL FMALE 20PO... |
SPD08-080-RB-TR | 3M | 4.31 $ | 800 | CONN EDGE DUAL FMALE 80PO... |
SPD08-040-L-RB-TR | 3M | 3.94 $ | 1000 | CONN EDGE DUAL FMALE 40PO... |
SPD08-200-L-RB | 3M | 9.86 $ | 53 | CONN EDGE DUAL FMALE 200P... |
SPD08-050-L-RB-TR | 3M | 3.84 $ | 1000 | CONN EDGE DUAL FMALE 50PO... |
SPD08-120-RB-TR | 3M | 4.57 $ | 1000 | CONN EDGE DUAL FMALE 120P... |
SPD08-020-L-RB-TR | 3M | 2.6 $ | 1000 | CONN EDGE DUAL FMALE 20PO... |
SPD08-040-RB-TR | 3M | 3.16 $ | 1000 | CONN EDGE DUAL FMALE 40PO... |
SPD08-060-L-RB-TR | 3M | 4.16 $ | 1000 | CONN EDGE DUAL FMALE 60PO... |
SPD08-180-L-RB | 3M | 6.01 $ | 1000 | CONN PCI EXP FEMALE 180PO... |
SPD08-160-RB-TR | 3M | 5.05 $ | 1000 | CONN PCI EXP FEMALE 160PO... |
SPD08-050-RB-TR | 3M | 2.72 $ | 1000 | CONN EDGE DUAL FMALE 50PO... |
SPD08-080-L-RB-TR | 3M | 4.17 $ | 1000 | CONN EDGE DUAL FMALE 80PO... |
SPD08-100-RB-TR | 3M | 4.21 $ | 1000 | CONN EDGE DUAL FMALE 100P... |
SPD04N50C3ATMA1 | Infineon Tec... | 0.49 $ | 1000 | MOSFET N-CH 500V 4.5A DPA... |
SPD04N80C3ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 800V 4A 3TO25... |
SPD04N50C3T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 560V 4.5A DPA... |
SPD07N60C3T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 7.3A DPA... |
SPD07N60S5T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.3A DPA... |
SPD07N60S5 | Infineon Tec... | -- | 1000 | MOSFET N-CH 600V 7.3A DPA... |
SPD02N50C3 | Infineon Tec... | -- | 1000 | MOSFET N-CH 560V 1.8A DPA... |
SPD02N60C3BTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A DPA... |
SPD04N60C3BTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 4.5A DPA... |
SPD06N80C3BTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 6A DPAKN... |
SPD07N60C3BTMA1 | Infineon Tec... | -- | 32499 | MOSFET N-CH 650V 7.3A DPA... |
SPD09P06PL | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 9.7A DPAK... |
SPD04N80C3BTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 4A TO-25... |
SPD07N20 | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 7A TO-25... |
SPD04N60S5BTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.5A TO2... |
SPD04N60C3 | Infineon Tec... | -- | 1000 | MOSFET N-CH 600V 4.5A TO2... |
SPD07N60C3 | Infineon Tec... | -- | 31964 | MOSFET N-CH 600V 7.3A TO2... |
SPD08P06PGBTMA1 | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 8.83A 3TO... |
SPD08N50C3ATMA1 | Infineon Tec... | 0.62 $ | 1000 | MOSFET N-CH 500V 7.6A DPA... |
SPD04P10PLGBTMA1 | Infineon Tec... | 0.23 $ | 1000 | MOSFET P-CH 100V 4.2A TO2... |
SPD06N80C3ATMA1 | Infineon Tec... | -- | 2500 | MOSFET N-CH 800V 6A 3TO25... |
SPD08P06P | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 8.83A DPA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...