SPD04N60S5BTMA1 Allicdata Electronics
Allicdata Part #:

SPD04N60S5BTMA1-ND

Manufacturer Part#:

SPD04N60S5BTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 4.5A TO252
More Detail: N-Channel 600V 4.5A (Tc) 50W (Tc) Surface Mount PG...
DataSheet: SPD04N60S5BTMA1 datasheetSPD04N60S5BTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: CoolMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
FET Feature: --
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The SPD04N60S5BTMA1 is a powerful N-channel MOSFET device that is an ideal choice for medium to high power applications. It is a single-gate device, and it has an ultra-high drain current of up to 600 A and a maximum drain voltage of 60 V. The device is also equipped with fast switching characteristics and is capable of providing superior performance in a wide variety of applications.

The SPD04N60S5BTMA1 MOSFET is mainly used in applications requiring high power or efficiency and in applications where the device size is critical. The device is suitable for use in switch-mode power supplies, high-frequency converters, AC/DC converters, and dc-dc converters. The device is also ideal for reverse battery protection, AC main switch and industrial motor control.

The primary benefit of using the SPD04N60S5BTMA1 is that it offers superior performance without sacrificing power efficiency. The device provides a low on-state resistance of only 2.6 mΩ. This allows the device to have a very low power loss even when operating at high current. The device also utilizes a high transconductance of 110S, which helps to minimize gate-source capacitance, resulting in improved switching performance.

The working principle behind the SPD04N60S5BTMA1 is based on the basic MOSFET design. When a gate voltage is applied to the device, the internal charge Carriers are switched on, allowing current to flow from the drain to the source. The device characteristics and performance can be adjusted by changing the gate voltage.

The SPD04N60S5BTMA1 is a reliable and robust device that provides superior performance in a range of power applications. The device is suitable for both commercial and industrial applications, and it can be easily integrated into any system. The device provides a high drain-source current capability, fast switching speeds and excellent efficiency, making it an ideal choice for demanding applications.

The specific data is subject to PDF, and the above content is for reference

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