SPD07N60C3BTMA1

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The SPD07N60C3BTMA1 is a n-channel vertical field-effect transistor (FET) designed for automated assembly. The structure of the SPD07N60C3BTMA1 is based on the high temperature Super junction technology. The device is suitable for a variety of applications including power switches, DC/DC converters, and switch mode power supplies, among others. It is part of the STPOWER MOSFET series and is available in both through-hole and surface-mount packages.

The SPD07N60C3BTMA1 has a very low gate charge, allowing for improved switching performance. This also reduces switching losses and helps to improve efficiency in switch mode applications. In addition, the low on-resistance of the device helps to maximize conduction while minimizing switching losses. The device is also robust and reliable, making it ideal for harsh environments.

The SPD07N60C3BTMA1 offers high current handling capabilities, with a maximum drain current of 5 A (continuous) and 7 A (pulsed) and a maximum drain-source voltage of 600 V. The device also offers a wide operating temperature range, from -40 ˚C to +175 ˚C. The SPD07N60C3BTMA1 also has a low drain-source capacitance, ideal for reducing energy stored in the switching circuit and improving the overall switching performance.

The main advantage of the SPD07N60C3BTMA1 is its low static drain-source on-resistance (RDS(on)), which helps to maximize current conduction and minimize switching losses. This is due to the nature of the Super junction technology, which utilizes multiple thin layers of different conductive materials to reduce the vertical channel resistance. This makes the SPD07N60C3BTMA1 an ideal choice for applications that require high performance, low loss operation.

The SPD07N60C3BTMA1 operates like any other MOSFET when power is applied to its Gate and Source pins. When the Gate voltage (VG) is higher than the Source voltage (VS), current (ID) begins to flow from Source to Drain, and the MOSFET is said to be in the “on” state. The on-resistance of the SPD07N60C3BTMA1 is temperature-dependent, meaning it decreases as the temperature increases. When VG equals VS, the device is in its “off” state, and no current flows.

In addition to its low on-resistance and high current handling capabilities, the SPD07N60C3BTMA1 also offers excellent dv/dt and dI/dt immunity. These features are important for maintaining the reliability and long-term stability of the device, even under heavy load or high dv/dt conditions. The device also offers a good power cycling performance and is able to withstand up to 1,000,000 power cycles.

The SPD07N60C3BTMA1 has a wide range of applications, including DC/DC converters, AC/DC converters, switch mode power supplies, inverters, motor drives, and other applications where high current handling and low on-resistance are required.

In summary, the SPD07N60C3BTMA1 is a n-channel vertical FET designed for automated assembly and suitable for a variety of applications. It utilizes high-temperature Super junction technology to provide low on-resistance and high current handling. The device also offers excellent dv/dt and dI/dt immunity, as well as good power cycling performance, making it ideal for use in harsh environments.

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