Allicdata Part #: | SPD07N60C3XTINTR-ND |
Manufacturer Part#: |
SPD07N60C3T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 7.3A DPAK |
More Detail: | N-Channel 650V 7.3A (Tc) 83W (Tc) Surface Mount PG... |
DataSheet: | SPD07N60C3T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The SPD07N60C3T is a single MOSFET, which is commonly applied to low-loss power conversion and circuit protection. The device is designed to offer high performance, low power losses, and fast switching capabilities. With high collector current and a large breakdown voltage, the SPD07N60C3T can provide reliable switching of power and protect circuit from over-current and short-circuit conditions. This article gives an overview of the device’s application field and working principle.
Application Field
The SPD07N60C3T MOSFET is suitable for applications that require efficient and fast switching of high power. It can be used in a wide range of applications, such as batter packs, power supplies, motor control, voltage regulation, and hot plugging of components. Due to its low power losses and high efficiency, it is ideal for circuits that require long term power conversion at high efficiency and low heat dissipation. This MOSFET can also be used in high switching frequency applications due its low input capacitance and fast switching capabilities. Its high breakdown voltage is also useful for providing circuit protection in applications where very high voltages are involved.
Working Principle
The SPD07N60C3T MOSFET is operated in the "enhancement mode" to provide fast switching.In the on-state, the device is turned on due to its voltage-controlled gate threshold. When the voltage between the gate and the source reach the device\'s threshold voltage, current flows from the source to the drain and no current flows from the drain to the source. This will cause the drain-to-source voltage (VDS) to be zero, meaning that the device is in its ON-state. To turn off the device, the gate voltage must be below the threshold voltage, and the current will no longer flow. This is how the SPD07N60C3T provides fast switching, allowing efficient power conversion and circuit protection.
Conclusion
The SPD07N60C3T is a high-performance, low-power MOSFET. It can be used in a wide range of applications where fast and efficient switching of power is required. It is also suitable for providing circuit protection in high voltage applications. The device operates in the "enhancement mode" by controlling its gate and source voltage to provide fast switching and zero drain-source voltage in the ON-state.
The specific data is subject to PDF, and the above content is for reference
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