SPD07N60C3T Allicdata Electronics
Allicdata Part #:

SPD07N60C3XTINTR-ND

Manufacturer Part#:

SPD07N60C3T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 7.3A DPAK
More Detail: N-Channel 650V 7.3A (Tc) 83W (Tc) Surface Mount PG...
DataSheet: SPD07N60C3T datasheetSPD07N60C3T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The SPD07N60C3T is a single MOSFET, which is commonly applied to low-loss power conversion and circuit protection. The device is designed to offer high performance, low power losses, and fast switching capabilities. With high collector current and a large breakdown voltage, the SPD07N60C3T can provide reliable switching of power and protect circuit from over-current and short-circuit conditions. This article gives an overview of the device’s application field and working principle.

Application Field

The SPD07N60C3T MOSFET is suitable for applications that require efficient and fast switching of high power. It can be used in a wide range of applications, such as batter packs, power supplies, motor control, voltage regulation, and hot plugging of components. Due to its low power losses and high efficiency, it is ideal for circuits that require long term power conversion at high efficiency and low heat dissipation. This MOSFET can also be used in high switching frequency applications due its low input capacitance and fast switching capabilities. Its high breakdown voltage is also useful for providing circuit protection in applications where very high voltages are involved.

Working Principle

The SPD07N60C3T MOSFET is operated in the "enhancement mode" to provide fast switching.In the on-state, the device is turned on due to its voltage-controlled gate threshold. When the voltage between the gate and the source reach the device\'s threshold voltage, current flows from the source to the drain and no current flows from the drain to the source. This will cause the drain-to-source voltage (VDS) to be zero, meaning that the device is in its ON-state. To turn off the device, the gate voltage must be below the threshold voltage, and the current will no longer flow. This is how the SPD07N60C3T provides fast switching, allowing efficient power conversion and circuit protection.

Conclusion

The SPD07N60C3T is a high-performance, low-power MOSFET. It can be used in a wide range of applications where fast and efficient switching of power is required. It is also suitable for providing circuit protection in high voltage applications. The device operates in the "enhancement mode" by controlling its gate and source voltage to provide fast switching and zero drain-source voltage in the ON-state.

The specific data is subject to PDF, and the above content is for reference

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