SPD03N60C3BTMA1

Vgs(th) (Max) @ Id:	3.9V @ 135µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	38W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	1.4 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

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The SPD03N60C3BTMA1 is a high-voltage MOSFET (metal oxide semiconductor field-effect transistor) that is used in a variety of applications, such as audio amplifier circuits, solar cell and inverter applications, motor control circuits, switching power supply circuits, and various other power management systems. As a MOSFET, it operates on the principle of a voltage-gated current flow and is ideal for applications requiring fast switching on/off and high current and voltage capabilities. Due to its high voltage and current capability, the SPD03N60C3BTMA1 is popularly used in applications involving high-voltage and high-power circuits, such as motor control, solar cell and inverter applications, switching power supply circuits, and various other power management systems. In such applications, the SPD03N60C3BTMA1 can be used to control current flow from a power source directly to a load in a very efficient manner, without reducing power output. Additionally, the device features low internal resistance, which helps to reduce power dissipated during current flow, thus increasing energy efficiency.In order to understand how the SPD03N60C3BTMA1 operates, it is important to understand its working principle. The device works on the principle of an insulated-gate field-effect transistor (IGFET), also known as a MOSFET. MOSFETs are voltage-controlled transistors that are capable of operating at high frequency and power, which makes them ideal for use in a variety of high-power applications. At the heart of the MOSFET design is a metal gate that is insulated from other components of the MOSFET and serves as the gate electrode. This gate electrode is used to control the current flowing between the source and drain electrodes, as the applied gate voltage is increased or decreased. When the electric field between the gate and drain electrodes is decreased, the current decreases and vice versa. In order to control the current flow through the MOSFET, the SPD03N60C3BTMA1 uses a depletion mode MOSFET. The depletion mode MOSFET, as the name suggests, works by depleting the available current in the channel between the source and drain electrodes. This can be done by applying a voltage between the gate and drain electrodes, or by using a depletion-mode capacitor circuitry in combination with the gate-drain voltage. When the gate-drain voltage is increased, the majority carriers are depleted from the region between the source-drain electrodes, causing a decrease in current flow. The SPD03N60C3BTMA1 is also equipped with a small protection circuit that helps to protect the device from any unexpected external surges. This protection circuit is designed to trigger an internal mechanism that operates to disconnect itself from the power source within milliseconds in order to prevent damage to the device. This ensures that the SPD03N60C3BTMA1 is protected from any unexpected power interruption and is therefore reliable enough to be used in a variety of applications. The SPD03N60C3BTMA1 has a wide range of applications and is capable of operating at high frequencies and power levels, making it an ideal choice for applications involving high-power circuits. Its protection circuit ensures reliable operation and its low internal resistance helps to reduce power dissipated during current flow, thus increasing energy efficiency. The SPD03N60C3BTMA1 is a great choice for any application requiring high-voltage and high-power capabilities.

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