SPD04P10PGBTMA1

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The SPD04P10PGBTMA1 is a logic level N-channel power MOSFET from STmicroelectronics Corp. It is specifically designed to provide low on-resistance and an enhanced gate charge to enable high speed switching. The device is capable of handling currents up to 10A and blocking voltages up to 30V, making it ideal for various applications such as power management circuits, power switches, and motor control circuits.

In operation, the MOSFET behaves as a switch, allowing the current to flow from the drain terminal to the source terminal when the gate terminal is energized with a positive voltage. When the voltage on the gate terminal drops below the threshold voltage, the MOSFET is turned off, inhibiting the current to flow. The threshold voltage is the voltage at which the MOSFET switches from on to off-state. The threshold voltage of the SPD04P10PGBTMA1 is 1.8V.

Before the voltage on the gate terminal reaches the threshold level, the device doesn’t conduct, and therefore behaves as an open circuit. As such, it is suitable for use in low-side switching applications and in situations where it needs to be used in conjunction with a pull-up resistor. It is also suitable for high-side switching applications, but care must be taken to ensure that the maximum Voltage is not exceeded.

The SPD04P10PGBTMA1 can be used in various types of circuits, from simple logic level switch applications to more complex circuits such as H-bridge configurations. It is also suitable for automotive applications and other applications that require reliable switching and high frequency operation.

The device also features a peak current capability of 10A and a max gate-drain voltage of 30V. This allows the device to be used in various types of applications, such as high power motor control circuits, power management circuits, and power switches. In addition, the device features a temperature rating of -40°C to 150°C, making it suitable for automotive applications.

In summary, the SPD04P10PGBTMA1 is a high-performance logic level N-channel power MOSFET specifically designed to offer low on-resistance and enhanced gate charge to enable high speed switching. It is suitable for a wide range of applications, including automotive applications that require reliable switching and high frequency operation. The device features a peak current capability of 10A and a max gate-drain voltage of 30V, allowing for a wide range of uses.

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