SPD07N20GBTMA1

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The SPD07N20GBTMA1 is a high-voltage, general-purpose N-channel, depletion-mode power MOSFET specifically designed for low on-resistance conductor path, with low gate drive requirements, and ultra-low gate charge. It has been designed with a combination of low capacitance and high performance for efficient control over the range of gate voltages.

The power Mosfet, designed for a wide range of applications, is available in flat, low profile and multi-pack options. The SPD07N20GBTMA1 operates from -55˚ to +175˚ Celsius. The series includes standard and advanced versions with various lead configurations.

The SPD07N20GBTMA1 device offers an extremely low on-resistance (RDS(on)) with ultra-low gate charge. Additionally, it offers a very efficient and reliable conduction path and provides superior switching performance while still maintaining very low gate drive requirements. The advanced device is also optimized for superior thermal performance.

The SPD07N20GBTMA1 offers the following applications:

• Booster and converters
• Communication systems
• DC-DC converters
• High voltage converters
• Power conversion sites
• Power supply converters
• Security systems

The working principle of the SPD07N20GBTMA1 is based on the physics of gated field effect transistors. The gate voltage (VG) controls the current through the channel between the drain (D) and the source (S) terminals. When the gate voltage (VG) is negative, a depletion field is created and the current between the drain and source terminals is blocked. Conversely, when the gate voltage (VG) is increased to a positive level, the depletion field decreases and the current between the drain and source terminals flows.

The power MOSFET has an advantage of low on-state resistance. This low resistance characteristic increases the conduction efficiency of the device and reduces the heat dissipation. Additionally, the device has an output voltage rating of up to 750V, which allows it to operate in some very high voltage applications. The power MOSFET also offers excellent switching performance, with low voltage ratings, low gate drive requirements and low gate charge.

The SPD07N20GBTMA1 has numerous characteristics that make it very desirable for a wide range of applications, including: low gate drive requirements, low on-resistance, and high voltage. The low on-resistance is particularly beneficial for reducing power dissipation and for improving system reliability. The high voltage rating is also beneficial for boosting and converters, as it allows them to operate in extreme electrical environments. Furthermore, the low gate drive requirement allows the device to be applied in a variety of applications, providing a cost-effective solution.

In conclusion, the SPD07N20GBTMA1 is an excellent choice for a wide range of applications, including booster and converters, communication systems, DC-DC converters, high voltage converters, power conversion sites and power supply converters. It has several key characteristics, including a low on-resistance, high voltage rating, low gate drive requirement, and low gate charge, making it suitable for several different applications. The device’s high performance and reliability make it an excellent choice for a range of applications.

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