SPD08N50C3BTMA1 Discrete Semiconductor Products

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The SPD08N50C3BTMA1 is a single MOSFET that is part of the FETs (Field-Effect Transistors) family. This FET is an N-channel device, with a maximum drain-source voltage of 500 Volts, 8 Amps maximum drain current, with RDS(on) of 2.7 Ohms at 10 Volts and a maximum drain to source on-state resistance of 2.0 Ohms. This MOSFET is designed for use in a variety of applications from power electronics to telecommunications and industrial automation.

The SPD08N50C3BTMA1 is a low-power, low-on-resistance (Rdson) MOSFET device with an integrated gate driver. It is a high-speed, low-voltage FET with a nominal threshold voltage of 4 Volts, which provides adequate noise immunity and low loss at high frequencies. This device is a true three-terminal enhancement mode FET that works in the depletion mode, meaning it requires a positive drain-source voltage to turn off the MOSFET. The device has a very low on-state resistance (Max. 2.7 Ohms) for a given drain voltage and drain current.

The SPD08N50C3BTMA1 works on the principle of the MOSFET, which is a three terminal device that consists of a source, drain and gate. A MOSFET is an energy efficient device. When the gate of the MOSFET receives a positive voltage, charge carriers are attracted between the source and the drain, resulting in a conduction path between them. The resistance of the conduction path is very low. As a result, the gate voltage has a great influence on the source-drain current, and so, controlling the gate voltage will make the current between source and drain to be in the desired extent.

The SPD08N50C3BTMA1 is typically used in switch mode power supplies, motor drives, inverters, uninterruptible power supplies, power factor correction, as well as other industrial and consumer applications. It is particularly suitable for isolation and directional protection because of its wide drain-source breakdown voltage range, low turn-on voltage, and low on-state resistance. The integrated gate driver of this MOSFET makes it suitable for high speed switching and reduce power dissipation.

Due to its low-on-resistance and high-speed switching characteristics, the SPD08N50C3BTMA1 is a great choice for many power MOSFET applications. It is a reliable device, with good thermal and mechanical properties, and it offers high-performance and low cost. This MOSFET can also handle high speed switching, which makes it suitable for power converters, motor drives, and other high speed switching applications.

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