SPD09P06PLGBTMA1 Discrete Semiconductor Products |
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Allicdata Part #: | SPD09P06PLGBTMA1TR-ND |
Manufacturer Part#: |
SPD09P06PLGBTMA1 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 9.7A TO252-3 |
More Detail: | P-Channel 60V 9.7A (Tc) 42W (Tc) Surface Mount PG-... |
DataSheet: | SPD09P06PLGBTMA1 Datasheet/PDF |
Quantity: | 20000 |
2500 +: | $ 0.23637 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 6.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SPD09P06PLGBTMA1 is a 60V 9A Power MOSFET manufactured by Diodes Incorporated. It is specifically designed for high-frequency switching applications such as DC-DC converters and motor control. The MOSFET is packaged in a 10-pin LLP (Low Profile Plastic) Power package with a maximum junction temperature of 175°C.
A power MOSFET is an electrically actuated form of a field-effect transistor (FET). The SPD09P06PLGBTMA1 is a n-channel enhancement mode MOSFET, which means that it is a voltage controlled device. The main distinguishing feature between a MOSFET and other FETs is the gate insulation layer. The insulation layer has a positive charge on one side and a negative charge on the other side. When a positive voltage is applied to the gate, electrons are drawn to the negative side, creating a conductive channel. This allows a current to flow between the source and drain, thus allowing the voltage applied to the drain to control the state of the MOSFET.
The SPD09P06PLGBTMA1 is intended for use in high frequency switching applications. It has an ultra-low on-state resistance of 0.19 ohms, which makes it ideal for high-frequency switching applications such as DC-DC converters, motor control, and battery management. It also features an impressive RDS(ON) of 0.091ohm, making it highly efficient when switching large currents. The MOSFET also includes built-in over-temperature and over-voltage protection, making it a reliable and reliable choice for power applications.
The SPD09P06PLGBTMA1 is suitable for a wide range of applications including switched-mode power supplies (SMPS) such as flyback converters, buck converters, and boost converters, as well as motor control and battery management. This MOSFET can also be used in automotive applications due to its extended temperature range (up to 175°C).
In summary, the SPD09P06PLGBTMA1 is an excellent choice for high frequency switching applications. It has very low on-state resistance and a high RDS(ON) for switching large currents. It also includes built-in protection features for high temperatures and over voltage protection, making it incredibly reliable. The MOSFET is also suitable for automotive applications due to its extended temperature range, making it a versatile choice.
The specific data is subject to PDF, and the above content is for reference
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