Allicdata Part #: | SPP100N03S2L-03IN-ND |
Manufacturer Part#: |
SPP100N03S2L-03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 100A TO-220AB |
More Detail: | N-Channel 30V 100A (Tc) 300W (Tc) Through Hole PG-... |
DataSheet: | SPP100N03S2L-03 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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SPP100N03S2L-03 Application Field and Working Principle
SPP100N03S2L-03 is a power MOSFET semiconductor component produced by Infineon Technologies. It is designed and manufactured using state-of-the-art technologies, and utilizes the Threshold Avalanche Trigger (TAT) process, which allows it to operate with a wide temperature range and low charge-carrier resistance—two features that far exceed what standard MOSFETs are capable of. These features, as well as its high current capability, makes SPP100N03S2L-03 ideal for applications such as DC-to-DC converters, motor controllers, and high-amplitude AC-DC power supplies.
The SPP100N03S2L-03 is a single N-channel enhancement mode MOSFET, which means it can control the flow of current in a single direction. This makes SPP100N03S2L-03 ideal for applications that require controlling current in one direction, such as DC motor controllers, DC-DC converters, and AC-DC power supplies. The N-channel MOSFET also offers a maximum drain-source voltage of 100V, a drain current of 180A, and a maximum gate threshold voltage of 5V—all of which are beneficial for power control applications.
The operation of SPP100N03S2L-03 is based on the MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) operation principle. In MOSFETs, current is transferred from the source to the drain through an electrically controlled gate. The gate voltage determines how much current flows through the MOSFET, since the gate voltage controls the thickness of the thin layer of insulation between the source and drain. The avalanche breakdown voltage is determined by the drain current, and the threshold voltage specifies the minimum gate voltage required to start the flow of current between the source and drain.
In addition to its single N-channel MOSFET configuration, SPP100N03S2L-03 also features a built-in temperature sensor to provide thermal protection. This temperature sensor is designed to detect any sudden changes in the temperature surrounding the MOSFET, and will shut down the device to protect it in case of such a change. This is especially important in applications that involve high current and/or high power, such as DC motor controllers and DC-DC converters.
Overall, the SPP100N03S2L-03 is a well-designed and high-performance MOSFET semiconductor component for power control applications. Its state-of-the-art technologies and high current capability make it ideal for applications in the fields of DC motors controllers, DC-DC converters, and AC-DC power supplies, as well as its built-in temperature sensor for added safety. With its wide temperature range, low resistance, and high current capability, the SPP100N03S2L-03 is an invaluable asset in the fields of electronic engineering.
The specific data is subject to PDF, and the above content is for reference
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