Allicdata Part #: | SPP15P10PLGHKSA1-ND |
Manufacturer Part#: |
SPP15P10PLGHKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 15A TO-220 |
More Detail: | P-Channel 100V 15A (Tc) 128W (Tc) Through Hole PG-... |
DataSheet: | SPP15P10PLGHKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1.54mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1490pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 11.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Field effect transistors, commonly known as FETs, are transistors utilized in electronic circuits to regulate the flow of current with the help of an electrostatic field. FETs are three terminal devices with source, gate and drain electrodes. The current flows between the source and the drain.
The acronym SPP15P10PLGHKSA1 stands for Silicon N-Channel MOSFET (Metal Oxide Semiconductor FET). This type of FET is classified under a single MOSFET device and is particularly used in digital applications and switching circuits.
Working principle
The working principle of an N-Channel MOSFET relies on the difference in voltage that is provided to the gate of the device. The gate is a special gate integrated into the device that controls the current flow. When a higher voltage is provided to the gate, a large current can pass through the device. When a lower voltage is provided, the current is restricted. The working principle also relies on the Gate-Source capacitance, and a good example of this is the MOSFET’s ability to amplify the input signal.
The N-Channel MOSFET works by allowing the positive charges to pass through the device while allowing the negative charges to be blocked. This is due to the fact that the N-Channel MOSFET is designed with a single type of charge carrier, either the electron or the hole. This single type of charge carrier is called a majority carrier. In the case of the N-Channel, it is the electrons that are used as the majority carrier.
Application field
The SPP15P10PLGHKSA1 is generally used for switching applications in both digital and analog circuits. It is commonly used in the amplifying stages of audio circuits, as well as in power management applications. FETs can be used in analog circuits, such as voltage-controlled amplifiers and active filters, as well as in digital circuits, such as logic gates.
In power management applications, a MOSFET is usually used to control the flow of current. A MOSFET can be used in power supplies or other power management systems to switch on or off a particular load. As current control is the primary purpose of MOSFETs in power management applications, the power dissipation of the MOSFET is essential in determining the maximum load current that can be switched.
The SPP15P10PLGHKSA1 is also suitable for driving large loads, such as motors. It has a low on-resistance (Ron) which can be used to reduce the power loss when driving high-power loads. The FET\'s low Ron is particularly useful for applications where efficiency is important.
The FET also has a high input impedance, making it ideal for applications where low power signals are required. It can be used to amplify small signals without introducing noise. It can also be used to buffer signals, as well as in audio circuits where the need for increased headroom is present.
In conclusion, the SPP15P10PLGHKSA1 is a single MOSFET device which is suitable for a variety of applications. It is most commonly used in digital and analog switching circuits, power management applications, and audio circuits.
The specific data is subject to PDF, and the above content is for reference
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