SPP100N06S2-05

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The SPP100N06S2-05 is a N-channel enhancement mode MOSFET with a low-frequency (50kHz) maximum operating frequency. It is available in a TO-263F package and can handle an operating voltage up to 100V. The device provides a low on-state resistance and high current capability. The SPP100N06S2-05 has applications in a variety of devices, including high-frequency switching, power conversion, and logic level shifting.

MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors) are one of the most commonly used types of transistors. They are available in both enhancement mode and depletion mode variants and are suitable for a wide range of applications. MOSFETs can be used to switch high current loads and control the speed at which they are switched. They are also used in analog circuits and logic circuit level applications where they provide low on-state resistance and fast switching times.

The basic structure of the SPP100N06S2-05 is a three terminal device, consisting of an n-type source, a p-type drain, and a gate. The gate is separated from the source and the drain by an insulating layer of oxide. A thin gap is left between the gate and the two other terminals, allowing for the MOSFET to be “enhanced” or “depleted” depending on the applied voltage to the gate. When the gate voltage is positive, the MOSFET is said to be in enhancement mode, resulting in current flow from the source to the drain. When the gate voltage is negative, the MOSFET is said to be in depletion mode, resulting in current flow from the drain to the source.

The SPP100N06S2-05 has a maximum operating frequency of 50kHz and a maximum junction temperature of 150°C. It has a very low R_on of 4.8 mΩ at an applied drain-source voltage of 10V (V_ds). The R_on rises with increasing V_ds, but still maintains a relatively low resistance. The device has a high breakdown voltage of 100V and a low gate threshold voltage of 1.9V. The device can also handle high currents up to 65A, with a maximum power dissipation of 160W.

The SPP100N06S2-05 is a versatile MOSFET that can be used in a number of applications. Its low R_on and high current handling capability makes it ideal for use in high-frequency switching, power conversion, and logic level shifting. Additionally, the low gate threshold voltage of the device allows it to be used in many low-power applications.

In summary, the SPP100N06S2-05 is an N-channel enhancement mode MOSFET with low R_on and high current carrying capability. It has a maximum operating frequency of 50kHz, a maximum junction temperature of 150°C, and a breakdown voltage of 100V. The device is suitable for a variety of applications, including high-frequency switching, power conversion, and logic level shifting.

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