Allicdata Part #: | SPP100N08S2L-07-ND |
Manufacturer Part#: |
SPP100N08S2L-07 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 100A TO-220 |
More Detail: | N-Channel 75V 100A (Tc) 300W (Tc) Through Hole PG-... |
DataSheet: | SPP100N08S2L-07 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7130pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 246nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 68A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP100N08S2L-07 is a type of MOSFET transistor operating within the 100V N-Channel enhancement mode. It is commonly used in audio amplifiers, DC-DC converters, load switches, and power management systems. The SPP100N08S2L-07 is designed for use in various types of high power applications including electric vehicles, telecom systems, communication systems, and domestic appliances.
A MOSFET is a type of transistor featuring an insulated gate, which reduces the probability of electrical accidents. A MOSFET has three terminals – gate (G), drain (D) and source (S). The gate is an insulated electrode, which separates the p-type and n-type semiconductor materials regions. The gate is connected to the gate electrode and can control the current between the drain and source. On the other hand, the drain and source can be used to control the flow of current between them.
The working principle of the SPP100N08S2L-07 MOSFET is based on the idea of tri-dynamic effet. The tri-dynamic effet is produced when current flow is applied to the gate. This current flow creates an electric field that modifies the conductivity of the drain and source layers. As a result, the voltage drop between the drain and the source is reduced significantly. The SPP100N08S2L-07 is designed to operate in the enhancement mode. In this mode, the current flows between the drain and source when the voltage applied to the gate is higher than the voltage applied to the drain.
The SPP100N08S2L-07 is used in many different applications because of its outstanding performance characteristics. It is especially useful in high power applications because of its low gate charge and low resistance-capacitance (RC) delay. Its design also makes it ideal for use in applications requiring high switch performance, such as audio amplifiers, DC-DC converters and load switches. In addition, it is highly reliable and capable of operating at high temperatures.
In conclusion, the SPP100N08S2L-07 is a popular MOSFET transistor operating in the 100V N-Channel enhancement mode. It is suitable for many different types of applications, including audio amplifiers, DC-DC converters and load switches, due to its excellent performance characteristics. Furthermore, its design is highly reliable and able to handle high temperatures, making it an ideal choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
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