SPP15N60CFDHKSA1 Allicdata Electronics
Allicdata Part #:

SPP15N60CFDHKSA1-ND

Manufacturer Part#:

SPP15N60CFDHKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 13.4A TO-220
More Detail: N-Channel 650V 13.4A (Tc) 156W (Tc) Through Hole P...
DataSheet: SPP15N60CFDHKSA1 datasheetSPP15N60CFDHKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 750µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 330 mOhm @ 9.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Transistors - FETs, MOSFETs - Single

SPP15N60CFDHKSA1 is a n-channel power MOSFET in a TO-247 package, produced by Infineon Technologies. It is designed primarily for low voltage, high current applications, such as DC-DC converters, automotive electronic devices, and whatever other application needs a MOSFET which can handle a high power dissipation.

Application Field

SPP15N60CFDHKSA1 is mainly used in various types of regulated power supplies, such as DC-DC converters and motor drives. It is also suitable for automotive applications, like battery solutions, power management systems and digital signal processors.

Working Principle

SPP15N60CFDHKSA1 is an N-channel MOSFET which consists of a source, a gate, a drain and a body which forms the substrate. The source is the terminal where electrons come out, the gate is the control terminal and the drain is the terminal where electrons enter.

The way this MOSFET works is that when a voltage is applied to the gate, a thin layer of electrons will be attracted onto the gate. This layer of electrons acts as a barrier between the source and the drain, effectively stopping the flow of electrons. As the voltage on the gate increases, so does the number of electrons on the gate, effectively increasing the electrical resistance between the source and the drain and reducing the current flow. This is how the SPP15N60CFDHKSA1 works as a switch.

SPP15N60CFDHKSA1 is an ideal choice for power management applications, as it can handle up to 600V, 230A and 165W of power dissipation. It has a low gate charge and a fast switching time, allowing for efficient power management and control.

Conclusion

SPP15N60CFDHKSA1 is a very versatile MOSFET, as it is suitable for a wide range of applications. By applying a voltage to the gate, you can control the amount of current flowing between the source and the drain, allowing you to switch circuits on and off quickly and efficiently. This makes it ideal for power management applications, such as DC-DC converters and motor drives.

The specific data is subject to PDF, and the above content is for reference

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