Allicdata Part #: | SPP15N60CFDHKSA1-ND |
Manufacturer Part#: |
SPP15N60CFDHKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 13.4A TO-220 |
More Detail: | N-Channel 650V 13.4A (Tc) 156W (Tc) Through Hole P... |
DataSheet: | SPP15N60CFDHKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 750µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1820pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 9.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.4A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Transistors - FETs, MOSFETs - Single
SPP15N60CFDHKSA1 is a n-channel power MOSFET in a TO-247 package, produced by Infineon Technologies. It is designed primarily for low voltage, high current applications, such as DC-DC converters, automotive electronic devices, and whatever other application needs a MOSFET which can handle a high power dissipation.
Application Field
SPP15N60CFDHKSA1 is mainly used in various types of regulated power supplies, such as DC-DC converters and motor drives. It is also suitable for automotive applications, like battery solutions, power management systems and digital signal processors.
Working Principle
SPP15N60CFDHKSA1 is an N-channel MOSFET which consists of a source, a gate, a drain and a body which forms the substrate. The source is the terminal where electrons come out, the gate is the control terminal and the drain is the terminal where electrons enter.
The way this MOSFET works is that when a voltage is applied to the gate, a thin layer of electrons will be attracted onto the gate. This layer of electrons acts as a barrier between the source and the drain, effectively stopping the flow of electrons. As the voltage on the gate increases, so does the number of electrons on the gate, effectively increasing the electrical resistance between the source and the drain and reducing the current flow. This is how the SPP15N60CFDHKSA1 works as a switch.
SPP15N60CFDHKSA1 is an ideal choice for power management applications, as it can handle up to 600V, 230A and 165W of power dissipation. It has a low gate charge and a fast switching time, allowing for efficient power management and control.
Conclusion
SPP15N60CFDHKSA1 is a very versatile MOSFET, as it is suitable for a wide range of applications. By applying a voltage to the gate, you can control the amount of current flowing between the source and the drain, allowing you to switch circuits on and off quickly and efficiently. This makes it ideal for power management applications, such as DC-DC converters and motor drives.
The specific data is subject to PDF, and the above content is for reference
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