Allicdata Part #: | SPP80N04S2-04-ND |
Manufacturer Part#: |
SPP80N04S2-04 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 80A TO-220 |
More Detail: | N-Channel 40V 80A (Tc) 300W (Tc) Through Hole PG-T... |
DataSheet: | SPP80N04S2-04 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6980pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP80N04S2-04 is a N-Channel Enhancement Mode Field Effect Transistor (FET) designed for high current and low voltage applications. It is a part of a series of power transistor products from STMicroelectronics, designed for a broad range of applications. This device features an extremely low on-resistance (RDS(on)) and is intended for high current, low voltage operation. This makes the SPP80N04S2-04 a great choice for many applications where high current is required but low operating voltage must be maintained, such as buck regulators or switching power supplies.
The SPP80N04S2-04 is a lateral power MOSFET, meaning that it consists of a single layer of semiconductor material with the electrical properties changed by applied voltage to control the current flow. The device is packaged in the popular TO-220-FP surface mount package and consists of a single N-Channel enhancement mode FET, with a maximum drain current of 7.3A (Continuously) and a maximum drain-source voltage of 40V.
The SPP80N04S2-04 features a drain-source on-resistance of only 0.017 ohms, making it a very efficient device for a wide range of applications. In addition, this device has a very fast switching speed, making it suitable for high speed switching applications such as DC-DC converters and motor control.
The SPP80N04S2-04 is designed for low to medium power applications. These applications may involve variable power sources, as well as signal conditioning. The device can also be used in applications such as DC-DC converters, switching power supplies, power distribution systems and other motor control applications. Furthermore, this device can be used to control high current pulses, as well as switching sensitive signal, making it an ideal choice for many types of applications.
As a single N-Channel Enhancement Mode Field Effect Transistor, the SPP80N04S2-04 is generally used for high current and low voltage applications. It is designed for low to medium power application, offering low on-resistance, fast switching speed and the ability to control high current pulses and sensitive signals. The device is also packaged in the popular TO-220-FP surface mount package, making it ideal for many types of applications. All of these qualities make the SPP80N04S2-04 an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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