Allicdata Part #: | SPP80N06S2L-07-ND |
Manufacturer Part#: |
SPP80N06S2L-07 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 80A TO-220 |
More Detail: | N-Channel 55V 80A (Tc) 210W (Tc) Through Hole PG-T... |
DataSheet: | SPP80N06S2L-07 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 150µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4210pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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SPP80N06S2L-07 is a type of insulated gate bipolar transistor MOSFET (IGBT). This type of device is a two-terminal semiconductor device that is designed to switch large currents in circuit applications. The device combines the advantages of fast switching characteristics of a MOSFET with the low on-state resistance of a bipolar transistor, making it ideal for use in appliances and other heavy-duty electrical applications.
The SPP80N06S2L-07 insulated gate MOSFET is designed with a built-in body diode to ensure current protection in the event of a high inrush current, and it also has a high yield fail-safe protection feature to protect against over-current damage. The device features an extremely fast switching time of less than 10ns, making it highly suitable for use in high-speed switching applications.
The SPP80N06S2L-07 MOSFET is best suited for use in high-current, high-power applications, such as inverters, UPS systems, motor control, and switch-mode power supply (SMPS) applications. The device can work up to 60V and has very low on-state resistance, making it ideal for power switching applications. It can handle load currents up to 80A and provides a high power-handling capability.
The SPP80N06S2L-07 IGBT has a very simple operating principle. It works by using two insulated gate electrode terminals that act as a gate and source, respectively. When an appropriate gate voltage is supplied, the current passes through the MOSFET, allowing it to turn ON and OFF, thereby performing its intended task.
In summary, the SPP80N06S2L-07 is an insulated gate MOSFET that is designed to switch large currents in circuit applications. It offers fast switching, a high yield fail-safe protection feature, and a low on-state resistance. It is best suited for use in high-current, high-power applications, such as inverters, UPS systems, motor control, and switch-mode power supply (SMPS). The device works by applying a voltage between two insulated gate electrode terminals and is a reliable, durable choice for power switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SPP80P06PBKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 80A TO-22... |
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SPP80N06S2-05 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2-07 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2-08 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2-09 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A TO-22... |
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