SPP80P06PHXKSA1 Allicdata Electronics
Allicdata Part #:

SPP80P06PHXKSA1-ND

Manufacturer Part#:

SPP80P06PHXKSA1

Price: $ 2.59
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 60V 80A TO-220
More Detail: P-Channel 60V 80A (Tc) 340W (Tc) Through Hole PG-T...
DataSheet: SPP80P06PHXKSA1 datasheetSPP80P06PHXKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 2.35620
10 +: $ 2.10546
100 +: $ 1.72658
500 +: $ 1.39811
1000 +: $ 1.17913
Stock 1000Can Ship Immediately
$ 2.59
Specifications
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 340W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5033pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 23 mOhm @ 64A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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Transistors are essential for creating circuits for computers and other electronic devices. FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are two types of transistors that are used in this type of applications. This article will discuss the application field and working principle of the SPP80P06PHXKSA1, a single-subtype MOSFET transistor.

MOSFET are such an important transistor type that they are used in nearly all transistors. This is because of their high efficiency and small switching times. SPP80P06PHXKSA1 is a single-subtype MOSFET transistor, it is often used in radio frequency circuits and switching power supplies, for example SMPS (Switched-Mode Power Supplies). These applications often involve switching high-frequencies, so SPP80P06PHXKSA1 provides good results in these applications.

The working principle of MOSFET is based on the MOS Capacitor, and is composed of gate-source capacitance, gate-drain capacitance, and the drain-source capacitance. These capacitances are what allow the MOSFET to function. The voltage is applied to the gate and it creates an electric field between it and the source and drain. This electric field controls the flow of current between the source and the drain. The more voltage applied to the gate, the more charge carriers (electrons or holes) are created and the more the drain current increases.

The SPP80P06PHXKSA1 is a MOSFET transistor with an RDS (drain-source on resistance) of 80V, so it has the capability to handle a switching current of 60A. In addition, it has a maximum voltage (VDS) of 75V. This makes it suitable for controlling higher voltages and motors, such as those found in large electrical appliances. It also has a maximum junction temperature of 175°C, which is higher than similar transistors on the market, making it ideal for applications that require higher operating temperatures.

SPP80P06PHXKSA1 MOSFET transistor has a slew rate of 1.2V/ns, which means it can switch quickly. This is ideal for applications requiring high-speed switching. It also has a very low capacitance, which helps to reduce interference and EMI (electromagnetic interference). This is beneficial for applications where high-level noise sensitivity is required.

In conclusion, the SPP80P06PHXKSA1 is a single-subtype MOSFET transistor which is suitable for applications requiring high levels of switching currents and operating temperatures. It has a low capacitance and fast slew rate, making it ideal for applications requiring high-speed switching. This transistor can be used in radio frequency circuits, switching power supplies, and large electrical appliances.

The specific data is subject to PDF, and the above content is for reference

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