SPP80N06S2L-05

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SPP80N06S2L-05 is a N-channel enhancement-mode Power MOSFET from STMicroelectronics. This part is comprised of an advanced technology G3-H3 trench process and N-channel MOSFET technology, which provides a wide range of specified RDS(on) performance with 10A, 20V ID and 80mΩ RDS(on) at 10V. It also includes a range of options for improved Avalanche Energy, as well as improved switching speed. This MOSFET can be used in a variety of applications, such as in telecommunications, automotive, industrial, and consumer products.

The SPP80N06S2L-05 features a low RDS(on) of 80mΩ at 10V. This helps improve the performance and efficiency of power conversion systems, as well as reduce energy consumption. In addition, it has an on-resistance over-temperature growth factor of 0.8%. The device also features a thermal resistance of 2.1°C/W junction to case, which helps to reduce temperature-related power losses and extend operating life. Furthermore, the MOSFET offers repetitive avalanche performance of up to 500V and can handle high surge currents (up to 20A).

The SPP80N06S2L-05 utilizes a unique G3-H3 trench process, which helps reduce on-resistance and keep gate charge low. The device is a gate-source voltage (VGS) enhancement-mode type with a maximum VGS of +20V. Furthermore, the MOSFET is qualified according to AEC-Q101 and RoHS compliant, making it suitable for automotive applications.

The primary application field of the SPP80N06S2L-05 is in power conversion and switching applications. The part features a low on-resistance and high avalanche energy, which makes it suitable for use in DC/DC converters, power factor correction circuits, motor control, power management, and many other applications. In addition, it can be used in automotive gate driver circuits, high-current switching, and various DC/DC converter designs.

The working principle of the SPP80N06S2L-05 is based on the voltage-controlled conduction in the N-channel MOSFET. This MOSFET uses a unique process technology, which helps reduce on-resistance, increase power efficiency, and reduce gate charge. When the gate voltage (VGS) exceeds the threshold voltage (VTH) of the device, electrons from the source create an inversion layer in the channel region. This changes the resistance between the source and drain, allowing a controlled flow of current through the device. When the gate voltage is reduced, any channel inversion is reversed, making the device an ideal choice for high-frequency applications. In addition, special cooling techniques are used to keep the power losses at a minimum.

In summary, the SPP80N06S2L-05 is an advanced N-channel MOSFET, designed with a unique G3-H3 trench process technology. It features a low RDS(on) and high avalanche energy, making it suitable for applications such as DC/DC converters, motor control, power management and others. Furthermore, it complies with AEC-Q101 and RoHS standards, making it suitable for automotive applications. The working principle of the device is based on the voltage-controlled conduction in the N-channel MOSFET. The combination of these features makes the SPP80N06S2L-05 an ideal choice for a wide range of applications in the consumer, automotive, industrial, and telecommunications sectors.

The specific data is subject to PDF, and the above content is for reference