Allicdata Part #: | SPP80N08S2-07-ND |
Manufacturer Part#: |
SPP80N08S2-07 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 80A TO-220 |
More Detail: | N-Channel 75V 80A (Tc) 300W (Tc) Through Hole PG-T... |
DataSheet: | SPP80N08S2-07 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6130pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 7.4 mOhm @ 66A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP80N08S2-07 is a N-Channel MOSFET that is built using a semiconductor substrate in a D-S (drain-source) technology. This device is commonly used for power switching, voltage and current regulation, and signal switching. It is typically sold as a transistor in a TO-252 package.
The SPP80N08S2-07 features low on-resistance and low gate charge characteristics, making it a beneficial choice for power applications. It offers 8.2V VDS (drain to source voltage) and a maximum drain current of 80A, making it suitable for handling high currents.
The working principle of the SPP80N08S2-07 is based on a type of semiconductor device known as a FET (field effect transistor). A FET is a three-terminal device that uses an electric field to control the flow of current across a channel. The SPP80N08S2-07 is an N-Channel MOSFET, which means that the conductivity of the channel is controlled by a voltage applied to the gate terminal. When a gate voltage is applied, the current will flow freely between the gate and the source, allowing for the efficient transfer of power.
The SPP80N08S2-07 is primarily used in low voltage power regulation and signal switching applications. It is capable of efficiently regulating voltages from as low as 6V to as high as 16V, making it an ideal choice for automotive systems. It provides fast switching, which makes it suitable for power management systems. Additionally, the SPP80N08S2-07 is well-suited for audio amplifiers, DC-DC converters, and motor drives, among other applications.
The SPP80N08S2-07 is a reliable device with a maximum junction temperature of 175°C and a maximum operating temperature of 150°C. Additionally, it offers good dielectric isolation, making it suitable for electrostatic discharge (ESD) protection. The SPP80N08S2-07 is designed to meet the highest industry standards, making it an excellent choice for power switching and signal switching applications.
In summary, the SPP80N08S2-07 is a N-Channel MOSFET that is commonly used for power switching, voltage and current regulation, and signal switching applications. It features low on-resistance and low gate charge characteristics, making it beneficial for power applications. The SPP80N08S2-07 is capable of efficiently regulating voltages from as low as 6V to as high as 16V. With its fast switching capability and reliable performance, the SPP80N08S2-07 is an ideal choice for power management systems, audio amplifiers, DC-DC converters, and motor drives, among other applications.
The specific data is subject to PDF, and the above content is for reference
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