Allicdata Part #: | SPP80N04S2L-03-ND |
Manufacturer Part#: |
SPP80N04S2L-03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 80A TO-220 |
More Detail: | N-Channel 40V 80A (Tc) 300W (Tc) Through Hole PG-T... |
DataSheet: | SPP80N04S2L-03 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7930pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 213nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP80N04S2L-03 is a N-channel Enhancement Mode power MOSFET designed for use in high-side switch and level shift applications. It has a maximum current rating of 80A and can operate at drain-source voltages as high as 40V. It also provides very low threshold voltage for excellent ESD protection. This makes the SPP80N04S2L-03 an ideal solution for applications that require high speed, high current and low noise.
The SPP80N04S2L-03 is built with a Depletion mode MOS structure which allows for both high-side switching and level shifting. This type of power MOSFET has the ability to act as a switch and a voltage level shifter by controlling the voltage on the gate of the FET. This allows the device to be used in applications which require voltage level translation or high side switching. It also features a low on-state resistance which enables it to conduct large current with low dissipation.
The SPP80N04S2L-03 is suitable for use in a wide range of applications. It can be used as the switching element in power converters, motor drives, lighting control, and many other applications. It can also be used in sensing and amplifier circuits. Additionally, it is a great choice for applications that require high speed, low noise, and high current.
The working principle of the SPP80N04S2L-03 is based on the concept of Drain-Source voltage and Gate voltage. When the Gate voltage is less than the Drain-Source voltage, the FET is said to be in the enhancement mode. In this state, the FET behaves like an open circuit and does not conduct current. When the Gate voltage is higher than the Drain-Source voltage, a current is conducted through the FET and it can act as a switch or a voltage level shifter.
In summary, the SPP80N04S2L-03 is a N-channel Enhancement Mode power MOSFET designed for high-side switching and level shifting applications. It offers excellent ESD protection, low on-state resistance, and low noise. It offers a maximum current rating of 80A and can operate at drain-source voltages as high as 40V. It is suitable for use as a switch or voltage level shifters in various applications including power converters, motor drives, lighting control, sensing, and amplifiers. Its working principle is based on the concept of Drain-Source voltage and Gate voltage.
The specific data is subject to PDF, and the above content is for reference
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