SPP80N06S2-H5

Vgs(th) (Max) @ Id:	4V @ 230µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	155nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	5.5 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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SPP80N06S2-H5: Application Field and Operating Principles

Introduction

The SPP80N06S2-H5 device is a logic n-channel MOSFET transistor designed for use in high-power switching applications. This MOSFET transistor is designed to offer superior power operation, providing a higher peak current carrying capacity and an excellent drain-to-source resistance (RDS(ON)), allowing for reduced losses and improved power efficiency. It is a cost-effective solution for a wide range of power switching applications.

Application Field of SPP80N06S2-H5

The SPP80N06S2-H5 device is suitable for use in a variety of applications, including:

• Motor control systems
• Power converters (e.g. DC-DC and AC-DC)
• Robotics
• Power amplifiers
• Power supply systems
• Consumer electronics
• Automotive applications

The SPP80N06S2-H5 device provides excellent performance in these application fields and more. It is designed with an innovative package design which provides excellent thermal management capabilities, allowing for very low thermal resistance. The device is highly reliable, and its wide range of operating temperature (-55 °C - 150 °C) allows it to operate in a variety of environmental conditions.

Working Principle

The SPP80N06S2-H5 device is an n-channel MOSFET transistor. MOSFETs are a type of transistor which control the flow of electrons between a source and a drain. The transistor has three pins: the Source, the Gate, and the Drain.The Gate pin is the control pin. This pin controls the flow of electrons between the Source and the Drain. When a voltage is applied to the Gate, an electric field is created which attracts the electrons, allowing them to flow through the transistor. This is known as the transistor’s “on” state. When no voltage is applied to the Gate, the electric field is not created, and the transistor is in its “off” state. The source is the pin that supplies the electrons. The drain is the pin where the electrons are drained. The source and drain pins are connected to the source and drain of the power source. When the transistor is in its on state, a current flows through the source, through the transistor, and then out of the drain. The amount of current that can flow through the transistor is limited by the Transistor’s RDS(ON), which is the “on resistance” of the transistor.The SPP80N06S2-H5 device has a low RDS(ON) which allows for higher peak currents to flow through the transistor, reducing losses and improving efficiency. This makes it ideal for high-powered switching applications.

Conclusion

The SPP80N06S2-H5 device is a cost-effective and reliable solution for high-powered switching applications. It has an excellent drain-to-source resistance (RDS(ON)), allowing for reduced losses and improved power efficiency, and its innovative package design provides excellent thermal management capabilities, allowing it to operate in a wide range of environmental conditions. It is suitable for use in a variety of applications, including motor control systems, power converters, robotics, power amplifiers, power supply systems, consumer electronics and automotive applications.

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