Allicdata Part #: | SPP80P06PBKSA1-ND |
Manufacturer Part#: |
SPP80P06PBKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 80A TO-220AB |
More Detail: | P-Channel 60V 80A (Tc) 340W (Tc) Through Hole PG-T... |
DataSheet: | SPP80P06PBKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 5.5mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 340W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5033pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 173nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 64A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Spp80p06pbksa1, which belongs to transistors - FETs, MOSFETs - Single, is a field effect transistor (FET) designed for high operating speed, high reliability, and ease of use. This device has a low leakage current and a high breakdown voltage, making it suitable for a wide range of applications, from automotive to portable electronic applications. In addition, the Spp80p06pbksa1 is also providing low power consumption and high heat dissipation. Due to its excellent performance, the Spp80p06pbksa1 is widely used in various industries.
The application fields of Spp80p06pbksa1 include power supplies, power amplifiers, radio frequency (RF) circuits, battery chargers, and other consumer electronics applications. As the power device, it is mainly used for the high voltage and current. The Spp80p06pbksa1 can be used in high performance amplifier circuits, inverter circuits and regulated power supplies. It can also be used as an efficient switch in a low frequency application.
The working principle of Spp80p06pbksa1 is based on the field-effect transistor (FET). FETs have a source, gate and drain which are used to control the current flow through the device. The gate is the control element of the device, where an electrical voltage is applied to control the current flow through the device. When the applied gate voltage is higher than a certain point, the flow of electrons (the current) will be allowed. When the applied gate voltage is lower than the certain point, the current will be blocked.
The Spp80p06pbksa1 is a single-gate N-channel enhancement mode MOSFET device. It has an internal gate structure which is compatible with the power gate drive. With the integrated body diode, the Spp80p06pbksa1 can achieve high voltage and current levels. Furthermore, the device exhibits low power dissipation, enabling longer operating periods and lower temperatures. In addition, the device has the capability of adjusting its gate impedance, allowing it to be used in high frequency applications.
In conclusion, the Spp80p06pbksa1 is a high performance FET transistor device, with a wide range of applications, excellent features, and high performances, making it suitable for various industries. With its low power consumption, high heat dissipation, and high gate impedance, the Spp80p06pbksa1 is an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SPP80P06PBKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 80A TO-22... |
SPP80N03S2L-06 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A TO-22... |
SPP80N06S08NK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N03S2-03 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A TO-22... |
SPP80N03S2L-03 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A TO-22... |
SPP80N03S2L04AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A TO-22... |
SPP80N04S2-04 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 80A TO-22... |
SPP80N04S2-H4 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 80A TO-22... |
SPP80N04S2L-03 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO-22... |
SPP80N06S08AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2-05 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2-07 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2-08 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2-09 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2-H5 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2L-05 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2L-06 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2L-07 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2L-09 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2L-11 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N06S2L-H5 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-22... |
SPP80N08S2-07 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 75V 80A TO-22... |
SPP80N08S2L-07 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 75V 80A TO-22... |
SPP80N10L | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 80A TO-2... |
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SPP8 | 3M | 2.37 $ | 1000 | SCOTCH-BRITE SURFACE PREP... |
SPP80N03S2L05AKSA1 | Infineon Tec... | 0.9 $ | 1000 | MOSFET N-CH 30V 80A TO-22... |
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