SPP80N06S08AKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SPP80N06S08AKSA1 is a type of field-effect transistor (FET), a widely used three terminal semiconductor device, with an insulated gate that is biased to control the current flowing through the other two terminals. It is made from a silicon-based material and is classified as a metal–oxide–semiconductor FET (MOSFET). This particular FET, the SPP80N06S08AKSA1, is a single, N-channel enhancement-mode MOSFET.

The gate in this FET is electrically isolated from its body, allowing the gate to control the flow of current between its other two terminals. This type of FET offers excellent performance in comparison to other FETs due to its capability of operating at high frequencies, low power dissipation and high input impedance, making it a suitable device in many applications.

The main application field for the SPP80N06S08AKSA1 is power management since this FET has a max drain current of 80 Amps, a max drain source voltage of 60 Volts and an absolute gate-source voltage of 30 Volts. It is often used in motor controllers and power converters, as well as for other DC/DC switching applications. Additionally, it is suitable for driving high current loads, such as relays and solenoids. The FET can also be employed for other applications, such as audio amplifiers and low frequency converters.

The SPP80N06S08AKSA1 can be used with a wide range of gate signals, allowing it to be used in many amplifying and switching circuits. In addition, it has a high input impedance, making it a good choice for applications that require high input impedance without significant losses. Additionally, this FET\'s low on-resistance allows it to achieve high efficiency in switching applications.

The SPP80N06S08AKSA1 operates on the principle of the movement of charge carriers in a semiconductor material. It is composed of a source and a drain, which are conducting electrodes that connect to either side of the FET, and the gate, which is made from an insulated material that is used to control the charge carriers between the source and the drain. When a positive voltage is applied to the gate, positive charge carriers called electrons, move from the source to the drain, allowing current to flow through the device. This is known as enhancement-mode, the type of operation of this specific FET.

When a negative voltage is applied to the gate, negative charge carriers called holes, move from the source to the drain, which allows current to flow through the device in the opposite direction, known as depletion-mode operation. This FET is an enhancement-mode type, meaning it requires a positive voltage to be applied to the gate to enable current to flow between the source and the drain.

The SPP80N06S08AKSA1 is a versatile FET with a range of applications in power management and for driving high current loads. It is composed of a source, a gate and a drain and operates on the principle of the movement of charge carriers in a semiconductor material. It is classified as an N-channel enhancement-mode MOSFET and offers excellent performance due to its capability of operating at high frequencies, low power dissipation and high input impedance.

The specific data is subject to PDF, and the above content is for reference