SPP80N06S2-08 Allicdata Electronics
Allicdata Part #:

SPP80N06S2-08-ND

Manufacturer Part#:

SPP80N06S2-08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 80A TO-220
More Detail: N-Channel 55V 80A (Tc) 215W (Tc) Through Hole PG-T...
DataSheet: SPP80N06S2-08 datasheetSPP80N06S2-08 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 215W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The SPP80N06S2-08 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) manufactured by Infineon Technologies. This MOSFET is a single-chip solution ideally suited for load and power switch applications.

Application Field

The SPP80N06S2-08 offers numerous benefits, making it ideal for use in a variety of applications. For example, the MOSFET can be used in batteries, portable electronic devices, automotive electronic systems, and even industrial equipment. The MOSFET can also be used for power switch applications, as it has low on-resistance and very low gate charge. This makes it highly efficient in power switching applications.

Working Principle

MOSFETs operate by using an electric field to control the flow of current through the transistor. This electric field is generated by the gate terminal of the transistor. When a voltage is applied to the gate, it creates a small electric field, which attracts electrons and moves them from the source to the drain. This causes the current to flow between the source and the drain, allowing power to be switched on or off.

The SPP80N06S2-08 utilizes a number of features that make it ideal for use in power switch applications. The MOSFET has a low on-resistance, meaning that the amount of current flowing through it is very low. This results in less power loss when the MOSFET is used in switching applications.

Furthermore, the SPP80N06S2-08 also features a low gate charge, which helps reduce switching losses. This is because it allows for faster switching speeds and improved efficiency. The SPP80N06S2-08 also features a built-in temperature protection circuit. This ensures that the MOSFET will not overheat during use, thus preventing damage and ensuring that it operates optimally.

In conclusion, the SPP80N06S2-08 is an ideal MOSFET for use in load and power switch applications. It offers low on-resistance, low gate charge, and built-in temperature protection, all of which make it an efficient and reliable solution.

The specific data is subject to PDF, and the above content is for reference

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