SQ3418AEEV-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQ3418AEEV-T1_GE3-ND

Manufacturer Part#:

SQ3418AEEV-T1_GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CHANNEL 30V 7.8A 6TSOP
More Detail: N-Channel 30V 7.8A (Tc) 4W (Tc) Surface Mount 6-TS...
DataSheet: SQ3418AEEV-T1_GE3 datasheetSQ3418AEEV-T1_GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 4W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SQ3418AEEV-T1_GE3 Application Field and Working Principle

SQ3418AEEV-T1_GE3 is a type of field-effect transistor (FET). It belongs to the family of single metal oxide semiconductor field-effect transistors (MOSFETs). In particular, it is classified as an enhancement-type vertical DMOSFET. The FETs can be used for various advanced electronic applications for control and switching of power.

Application Fields

The SQ3418AEEV-T1_GE3 is primarily used in automation, drives, renewable energy systems, motor control, and medical applications. As its maximum drain-source breakdown voltage (BVDSS) is 60 V, the highest voltage it can handle is 60 V. That makes it suitable for managing low-voltage operations.

  • Robot Drives: This type of FET can be used in robots to control servos and to provide steady torque while running. It is also useful for protecting the system from overloading.
  • DC-DC Converters: This type of FET can be used in DC-DC converters, such as Buck converters, to enhance power efficiency and to provide steady output voltage.
  • Power Converters: It is suitable for use in power converters such as Buck and Boost converters where maximum current handling is required for supplying large amounts of power.
  • Lighting: It also proves to be beneficial in lighting applications as it can provide stable and reliable lighting, as well as helps to reduce electricity consumption.

Working Principle

The SQ3418AEEV-T1_GE3 is mainly comprised of two parts, the gate and the drain. The gate is the control unit; when current is applied to it, it opens the drain and allows current to pass through it. This makes it an enhancement-type FET. A MOSFET is composed of a semiconductor body with two layers, the source, and the drain, one layer on each end. The source and the drain are connected to a gate. When a signal is applied to the gate, it causes an attraction or repulsion of holes, allowing current or preventing current from flowing through the drain. That is the basic working principle of a MOSFET.

The SQ3418AEEV-T1_GE3 has a low on-state resistance, which makes it suitable for managing low-voltage operations, and it provides economical switching applications. This type of FET can be used for driving a wide range of components, such as lamps, motors, and solenoids. It also has a high breakdown voltage and is capable of handling up to 60 V. The device also features excellent temperature stability, which makes it suitable for use in high-temperature applications.

Conclusion

The SQ3418AEEV-T1_GE3 is a powerful and reliable field-effect transistor that is suitable for a wide range of electronic applications. It can handle up to 60 V and is capable of switching smaller components such as motors and lamps. It is also temperature-stable and efficient in controlling various types of applications. This makes it an ideal choice for the automation, drives, renewable energy systems, motor control, and medical industry.

The specific data is subject to PDF, and the above content is for reference

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