Allicdata Part #: | SQ3418AEEV-T1_GE3-ND |
Manufacturer Part#: |
SQ3418AEEV-T1_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHANNEL 30V 7.8A 6TSOP |
More Detail: | N-Channel 30V 7.8A (Tc) 4W (Tc) Surface Mount 6-TS... |
DataSheet: | SQ3418AEEV-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
SQ3418AEEV-T1_GE3 Application Field and Working Principle
SQ3418AEEV-T1_GE3 is a type of field-effect transistor (FET). It belongs to the family of single metal oxide semiconductor field-effect transistors (MOSFETs). In particular, it is classified as an enhancement-type vertical DMOSFET. The FETs can be used for various advanced electronic applications for control and switching of power.
Application Fields
The SQ3418AEEV-T1_GE3 is primarily used in automation, drives, renewable energy systems, motor control, and medical applications. As its maximum drain-source breakdown voltage (BVDSS) is 60 V, the highest voltage it can handle is 60 V. That makes it suitable for managing low-voltage operations.
- Robot Drives: This type of FET can be used in robots to control servos and to provide steady torque while running. It is also useful for protecting the system from overloading.
- DC-DC Converters: This type of FET can be used in DC-DC converters, such as Buck converters, to enhance power efficiency and to provide steady output voltage.
- Power Converters: It is suitable for use in power converters such as Buck and Boost converters where maximum current handling is required for supplying large amounts of power.
- Lighting: It also proves to be beneficial in lighting applications as it can provide stable and reliable lighting, as well as helps to reduce electricity consumption.
Working Principle
The SQ3418AEEV-T1_GE3 is mainly comprised of two parts, the gate and the drain. The gate is the control unit; when current is applied to it, it opens the drain and allows current to pass through it. This makes it an enhancement-type FET. A MOSFET is composed of a semiconductor body with two layers, the source, and the drain, one layer on each end. The source and the drain are connected to a gate. When a signal is applied to the gate, it causes an attraction or repulsion of holes, allowing current or preventing current from flowing through the drain. That is the basic working principle of a MOSFET.
The SQ3418AEEV-T1_GE3 has a low on-state resistance, which makes it suitable for managing low-voltage operations, and it provides economical switching applications. This type of FET can be used for driving a wide range of components, such as lamps, motors, and solenoids. It also has a high breakdown voltage and is capable of handling up to 60 V. The device also features excellent temperature stability, which makes it suitable for use in high-temperature applications.
Conclusion
The SQ3418AEEV-T1_GE3 is a powerful and reliable field-effect transistor that is suitable for a wide range of electronic applications. It can handle up to 60 V and is capable of switching smaller components such as motors and lamps. It is also temperature-stable and efficient in controlling various types of applications. This makes it an ideal choice for the automation, drives, renewable energy systems, motor control, and medical industry.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQ3427EEV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 5.5A 6TSO... |
SQ3419EEV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 7.4A 6TSO... |
SQ3418EEV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 8A 6TSOPN... |
SQ3426EEV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 7A 6TSOPN... |
SQ3442EV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 4.3A 6TSO... |
SQ3427EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CH 60V 6TSOPP-Ch... |
SQ3426EV-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHANNEL 60V 7A 6... |
SQ3419EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CH 40V 7.4A 6TSO... |
SQ3481EV-T1_GE3 | Vishay Silic... | 0.18 $ | 6000 | MOSFET P-CHANNEL 30V 7.5A... |
SQ3469EV-T1_GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 8A TSOP-6... |
SQ3410EV-T1_GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET N-CH 30V 8A TSOP-6... |
SQ3457EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CHANNEL 30V 6.8A... |
SQ3418EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET N-CHANNEL 40V 8A 6... |
SQ3419AEEV-T1_GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET P-CHANNEL 40V 6.9A... |
SQ3426AEEV-T1_GE3 | Vishay Silic... | 0.21 $ | 1000 | MOSFET N-CH 60V 7A 6TSOP |
SQ3418AEEV-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHANNEL 30V 7.8A... |
SQ3461EV-T1_GE3 | Vishay Silic... | 0.2 $ | 1000 | MOSFET P-CHANNEL 12V 8A 6... |
SQ3460EV-T1_GE3 | Vishay Silic... | 0.29 $ | 1000 | MOSFET N-CH 20V 8A 6TSOPN... |
SQ3427AEEV-T1_GE3 | Vishay Silic... | 0.21 $ | 3000 | MOSFET P-CH 60V 6TSOPP-Ch... |
SQ3456BEV-T1_GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 7.8A 6TSO... |
SQ3425EV-T1_GE3 | Vishay Silic... | 0.18 $ | 3000 | MOSFET P-CHANNEL 20V 7.4A... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...