SQ3481EV-T1_GE3

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The SQ3481EV-T1_GE3 is a "high-side" power MOSFET, designed to operate in a single-ended configuration for use in a variety of high-power applications.

This device is an epitaxial construct that features optimized and tightly controlled threshold voltage for improved performance. This devices features low on-resistance and fast switching performance with minimal noise and reduced thermal stress.

The SQ3481EV-T1_GE3 also features low gate charge to gate voltave drive ratio, as well as a third-order subthreshold slope which can help reduce a system’s power consumption. This device has an over-temperature protection so it can operate safely when presented with unforeseen conditions.

Such high-power applications include, but are not limited to, automotive and DC/DC converter power supply, motor drive and switching, and power management. In particular, when used with a Logic Level Gate, the SQ3481EV-T1_GE3 can be used in applications where it needs to switch higher current and voltages.

Working Principle of the SQ3481EV-T1_GE3

The SQ3481EV-T1_GE3 is a "high-side" power MOSFET, designed with a single-ended configuration, and is configured to operate with a P-channel MOSFET. It works on the principle of current conduction through a semiconductor channel with three terminals. The main terminals of a MOSFET are the drain, the source, and the gate.

The source is connected to the negative or ground rail, and the drain is connected to the load or outputrail. The gate terminal is connected to a control signal, either a logic signal or a DC voltage source. When the logic signal or voltage source is high the MOSFET is open and the current flow is blocked, while when the signal or voltage is low the MOSFET is closed and the current flow is allowed.

The SQ3481EV-T1_GE3 is also designed with an over-temperature protection feature. If a system presented with unforeseen conditions causes the temperature of the MOSFET to increase, the current flow through the MOSFET will automatically and gradually reduce until it reaches a safe level and the MOSFET will not be damaged.

Conclusion

The SQ3481EV-T1_GE3 is a power MOSFET optimized for use in high-power applications such as automotive and DC/DC converters, motor drives and switching, and power management. It features a low on-resistance, fast switching performance with minimal noise and reduced thermal stress, as well as over-temperature protection.

The SQ3481EV-T1_GE3 operates on the principle of current conduction through a semiconductor channel with three terminals, with the source connected to the negative or ground rail and the gate terminal connected to a control signal, either a logic signal or a DC voltage source.

The SQ3481EV-T1_GE3 is an excellent choice for use in a wide range of high-power applications due to its optimized and tightly controlled threshold voltage for improved performance, low gate charge to gate voltave drive ratio, and third-order subthreshold slope which can help reduce a system’s power consumption.

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