Allicdata Part #: | SQ3460EV-T1_GE3TR-ND |
Manufacturer Part#: |
SQ3460EV-T1_GE3 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 8A 6TSOP |
More Detail: | N-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TS... |
DataSheet: | SQ3460EV-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.25528 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 5.1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
A SQ3460EV-T1_GE3 is a type of field-effect transistor (FET) used in many applications. It is also known as an enhancement-mode MOSFET (metal-oxide-semiconductor field-effect transistor), a voltage variable resistor, or a JFET (junction field-effect transistor). FETs are semiconductor devices commonly used in amplifier and other circuit designs. They are essentially three-terminal devices with a number of gates and a controllable conduction channel that can be opened and closed to manage an electric current flow.
What is SQ3460EV-T1_GE3 ?
The SQ3460EV-T1_GE3 is a single FET type with a maximum drain-source voltage of 30V, a maximum drain current of 0.5A, and a maximum junction temperature of 150°C. It also has a threshold voltage of 4V, a gate-source capacitance of 50pF, a single N-channel configuration, and a maximum power dissipation of 800mW. It has a plastic package with a leadless form factor and is capable of operating a frequency up to 4MHz.
The SQ3460EV-T1_GE3 is a digital logic level gate driver featuring advanced design techniques including a high-temperature-resistant copper-molybdenum (CuMo) contact layer reducing contact resistance and improving reliability. It supports a wide range of gate voltage levels up to 5.5V, making it suitable for low-voltage applications. These features make the SQ3460EV-T1_GE3 ideal for use in logic gate drive circuits and power switching applications.
Application
The SQ3460EV-T1_GE3 is a versatile device with a range of applications in the electronics industry. It is mainly used in applications where control of an electric current flow is required, such as DC-DC converters, audio amplifiers, motor and light controllers, power supplies, and industrial process control. It can also be used in other applications such as data communications, motor and appliance control, and power switching.
In motor and light controllers, it can be used to control the amount of current that the motor draws from the source and the amount of light emitted by the light source. It can also be used in DC-DC converters to control the voltage and current flow to a variety of power sources, such as solar cells and batteries. In data communication, it can be used to control the flow of data, such as resetting a communication line or switching a signal on or off.
Working Principle
The SQ3460EV-T1_GE3 works on the basic principle of electrical conduction and modulation. The transistor consists of an input gate terminal, a drain terminal, and a source terminal. A voltage applied to the input gate terminal will create a conduction channel between the drain and the source terminals. As the voltage increases, the channel will increase in size, allowing more current to flow from the source to the drain. When the gate voltage is removed, the conduction channel will be reduced, thus reducing the current flow from the source to the drain.
The SQ3460EV-T1_GE3 can be used to modulate the flow of current from the source to the drain, due to the fact that the size of the conduction channel is dependent on the gate voltage. By varying the voltage applied to the gate terminal, the amount of current flowing from the source to the drain can be controlled, allowing for precise control of the current flow.
Benefits
The benefit of the SQ3460EV-T1_GE3 is that it can be used to control the flow of current in a variety of applications. It can be used in motor and light controllers, to accurately control the amount of current flowing from the source to the load. It can also be used in audio amplifiers to modulate the level of the audio signal. In addition, it can be used in DC-DC converters to step down or step up the voltage to the desired level. All of these applications are made possible due to the ability of the SQ3460EV-T1_GE3 to accurately control the current flow.
Conclusion
In summary, the SQ3460EV-T1_GE3 is a single FET type with a wide range of applications in the electronics industry. It is mainly used in motor and light controllers, DC-DC converters, audio amplifiers, and data communications. It works on the basic principle of electrical conduction and modulation, where the size of the conduction channel is dependent on the gate voltage. The benefit of the SQ3460EV-T1_GE3 is that it can be used to precisely control the flow of current.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SQ3427EEV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 5.5A 6TSO... |
SQ3419EEV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 7.4A 6TSO... |
SQ3418EEV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 8A 6TSOPN... |
SQ3426EEV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 7A 6TSOPN... |
SQ3442EV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 4.3A 6TSO... |
SQ3427EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CH 60V 6TSOPP-Ch... |
SQ3426EV-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHANNEL 60V 7A 6... |
SQ3419EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CH 40V 7.4A 6TSO... |
SQ3481EV-T1_GE3 | Vishay Silic... | 0.18 $ | 6000 | MOSFET P-CHANNEL 30V 7.5A... |
SQ3469EV-T1_GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 8A TSOP-6... |
SQ3410EV-T1_GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET N-CH 30V 8A TSOP-6... |
SQ3457EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CHANNEL 30V 6.8A... |
SQ3418EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET N-CHANNEL 40V 8A 6... |
SQ3419AEEV-T1_GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET P-CHANNEL 40V 6.9A... |
SQ3426AEEV-T1_GE3 | Vishay Silic... | 0.21 $ | 1000 | MOSFET N-CH 60V 7A 6TSOP |
SQ3418AEEV-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHANNEL 30V 7.8A... |
SQ3461EV-T1_GE3 | Vishay Silic... | 0.2 $ | 1000 | MOSFET P-CHANNEL 12V 8A 6... |
SQ3460EV-T1_GE3 | Vishay Silic... | 0.29 $ | 1000 | MOSFET N-CH 20V 8A 6TSOPN... |
SQ3427AEEV-T1_GE3 | Vishay Silic... | 0.21 $ | 3000 | MOSFET P-CH 60V 6TSOPP-Ch... |
SQ3456BEV-T1_GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 7.8A 6TSO... |
SQ3425EV-T1_GE3 | Vishay Silic... | 0.18 $ | 3000 | MOSFET P-CHANNEL 20V 7.4A... |
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