Allicdata Part #: | SQ3461EV-T1_GE3TR-ND |
Manufacturer Part#: |
SQ3461EV-T1_GE3 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CHANNEL 12V 8A 6TSOP |
More Detail: | P-Channel 12V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP |
DataSheet: | SQ3461EV-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.17649 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7.9A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQ3461EV-T1_GE3 is a single-channel enhancement-mode MOSFET that is normally used in low-side switching situations. It is a device that is used to control the flow of a certain amount of electric current from a source to a drain. MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are incredibly versatile devices that have many different applications, from low-power circuits to high-power switching. The SQ3461EV-T1_GE3 is designed for low-side switching situations and provides excellent performance in this application.The SQ3461EV-T1_GE3 is designed to be used in low-side switching circuits. In such a circuit, the source is always connected to ground, while the gate and drain are connected to a power supply. When the gate is driven with a positive voltage, the MOSFET becomes "ON" and allows a current to flow from the source to the drain. This is known as the "enhancement-mode" of operation. When the gate voltage is driven to a negative voltage, the MOSFET becomes "OFF" and does not allow the current to flow.The SQ3461EV-T1_GE3 has been designed to offer excellent performance in low-side switching applications. It has a breakdown voltage (VGS) of -14V and a maximum threshold voltage (VGS(th)) of 3.0V. This makes it suitable for use in low-voltage, low-power switching circuits. It also has a low on-resistance (RDS(ON)) of 0.015 ohms and a maximum continuous drain current (ID) of 72A. This makes it suitable for applications that require high-power switching.The SQ3461EV-T1_GE3 is widely used in circuits that require the efficient control of power. It is often found in motor control applications, including electric vehicle systems and industrial motor drives. It is also used in consumer electronics and networking applications, such as modems and routers.The SQ3461EV-T1_GE3 is also a popular choice for use in AC-DC power supplies. In such applications, the MOSFET is used as a switch to control the flow of current into the load. This allows for greater efficiency and lower heat dissipation.The SQ3461EV-T1_GE3 is an incredibly versatile device that is used in a wide array of applications. Its low on-resistance and excellent breakdown voltage make it suitable for low-power, low-voltage switching applications, while its high drain current handling capability makes it suitable for high-power, high-voltage applications. No matter what the application, the SQ3461EV-T1_GE3 is sure to provide exceptional performance.
The specific data is subject to PDF, and the above content is for reference
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SQ3418EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET N-CHANNEL 40V 8A 6... |
SQ3419AEEV-T1_GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET P-CHANNEL 40V 6.9A... |
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