SQ3469EV-T1_GE3

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SQ3469EV-T1_GE3 is a depletion-mode single N-channel MOSFET transistor based on the STripFET 5 process with low RDS(on). This enhancement-mode transistor is capable of low on-resistance with very low gate drive power and features low gate charge which leads to very lower switching losses. As a result, this transistor is suitable for a wide range of applications, including applications in automotive and industrial systems.

Working principle:

When the gate voltage is below the threshold voltage (VTH), the SQ3469EV-T1_GE3 MOSFET transistor is in its depletion-mode and the drain-source current (ID) is off. When the gate voltage is greater than the threshold voltage (VTH), the transistor is in its enhancement-mode and the drain-source current (ID) is on. This MOSFET transistor operates in its linear region when the gate-source voltage (VGS) is between the threshold voltage (VTH) and the peak gate voltage (VGS(peak)), and in its saturation region when the gate-source voltage (VGS) is greater than the peak gate voltage (VGS(peak)).

Application fields:

SQ3469EV-T1_GE3 MOSFET transistor can be used in a wide range of applications such as automotive, industrial and consumer electronics. This device is particularly suitable for the automotive sector, such as onboard power and body control networks, including the switching regulators, H-bridge and full-bridge applications. The SQ3469EV-T1_GE3 can also be used in industrial applications, such as motor, welding and printer control, as well as in consumer electronics including power converters, heaters and power supplies.

This transistor operates at high performance, has high gain and excellent thermal performance. It is fully RoHS compliant and offers excellent ESD performance for reliable and safe operation. It also has a fast switching speed with low on-resistance, making it ideal for high frequency and high switching power applications. In addition, this device is highly reliable, with low leakage current and high immunity to latch-up.

Conclusion:

SQ3469EV-T1_GE3 is a high performance depletion-mode single N-channel MOSFET transistor based on the STripFET 5 process. It features low on-resistance and low gate drive power. This device is suitable for a wide range of applications including automotive and industrial systems, as well as consumer electronics. With its fast switching speed and low on-resistance, it is ideal for high frequency and high switching power applications. Furthermore, it is highly reliable, with low leakage current and high immunity to latch-up.

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