SQ3426AEEV-T1_GE3

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SQ3426AEEV-T1_GE3 is a single discrete part of the MOSFET. It is part of the family of field effect transistors (FETs), which are semiconductor devices that allow control of high-frequency signals and power in switching applications.

What is SQ3426AEEV-T1_GE3?

SQ3426AEEV-T1_GE3 is a single p-channel enhancement-mode Field Effect Transistor (FET). It is designed for use as a load switch or as a low-side switch in a variety of applications such as low voltage/low on-resistance load switches, power converters and switches, and motor control. It has an operating drain-source voltage (VDS) of -14V, a drain current (ID) of 200mA, an on-resistance (RDS(ON)) of 250mΩ and a maximum power dissipation (PD) of 455mW.

Features

SQ3426AEEV-T1_GE3 has several features that make it an attractive choice for low voltage/low on-resistance load switches, power converters and switches, and motor control, including:

• Low RDS(ON) of 250mΩ, enabling higher energy efficiency in circuits
• Low gate charge (Qg) for faster switching times
• Small package size, ideal for smaller devices and high power density applications
• Integrated ESD protection for longer lifetimes

Applications

SQ3426AEEV-T1_GE3 is well-suited for a variety of applications that require low RDS(ON), including:

• Low voltage/low on-resistance load switches
• Power converters and switches
• Motor control
• Switching power supplies
• Lighting controls
• Industrial electronics
• Consumer electronics

Working principle

SQ3426AEEV-T1_GE3 works on the principle of an enhancement-mode commutation. In this type of circuit, a positive voltage is applied to the gate terminal, which increases the drain-source current. When the gate voltage is lowered to a certain level, the positive voltage is turned off, and the current flow between the drain and source is cut off. This off state is called the "cut off region" of the circuit. The cut off region is a very low-power state in which the drain-source current is near zero.

The SQ3426AEEV-T1_GE3 has an onboard ESD protection system that helps to minimize device damage and increase the lifespan of the device. The device also features a low gate charge (Qg) which allows for faster switching times and improved efficiency. The device is housed in an industry-standard SO-8 package, making it ideal for a variety of applications.

Conclusion

SQ3426AEEV-T1_GE3 is an attractive candidate for use as a low voltage/low on-resistance load switches, power converters and switches, and motor control. The device features an operating drain-source voltage (VDS) of -14V, a drain current (ID) of 200mA, an on-resistance (RDS(ON)) of 250mΩ and a maximum power dissipation (PD) of 455mW. It has an onboard ESD protection system that helps to minimize device damage and increase the lifespan of the device. The device is housed in an industry-standard SO-8 package and features a low gate charge (Qg) for faster switching times. Thanks to its features and good performance, it is suitable for a variety of switching applications.

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