SQ3457EV-T1_GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	705pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	21nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	65 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	6.8A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SQ3457EV-T1_GE3 Application Field and Working Principle

Introduction

The SQ3457EV-T1_GE3 is a transistor device used in many electronic components. It is a type of Field-Effect Transistor (FET) that acts as a switch to control current flow. As such, it is a semiconductor device that can provide a wide range of voltage and current for a variety of applications.In particular, the SQ3457EV-T1_GE3 is a metal-oxide semiconductor field-effect transistor (MOSFET) type, designed to operate very efficiently in power management applications with maximum speed and low dissipation. It is also a voltage-controlled device with a low on-state resistance.

Application Field

The SQ3457EV-T1_GE3 is well suited for applications in low-voltage, high-power applications such as DC-DC converters, motor controls, and other power management applications. It is also ideal for high-current, low voltage switching applications such as HVAC (heating, ventilation, and air conditioning) systems, white goods, and lighting solutions. The MOSFET-type also provides good noise protection from unwanted signals, making it ideal for use in communications systems and other data processing circuits. In addition, the low on-state resistance and superior heat management characteristics make it well suited for use in high-temperature environments.

Working Principle

The SQ3457EV-T1_GE3 is a voltage-controlled transistor device. It works by using an electric field to control current through a conducting channel between two terminals, the source and drain.In a MOSFET, the electric field is generated by a non-conducting layer called the gate. When a voltage is applied to the gate, charge carriers (electrons or holes) accumulate in the channel, creating an electric field that controls the current flow between the source and drain. This process is called carrier modulation.The more positive voltage applied to the gate, the more charge carriers accumulate in the conducting channel, and the more current the FET can control. Conversely, when the voltage is reduced, the gate\'s electric field decreases, allowing fewer charge carriers to accumulate, and reducing the amount of current that can be controlled by the FET. When the gate voltage is sufficiently reduced, the FET turns off completely and ceases to conduct current. This process is known as cut-off and it is useful for controlling the speed and movement of motors, for instance.The SQ3457EV-T1_GE3 is designed to be directly integrated into existing systems, making it an ideal solution for applications requiring a low on-state resistance, high-speed control, or superior heat management.

Conclusion

The SQ3457EV-T1_GE3 is an excellent choice for applications requiring a low on-state resistance, accurate, high-speed control, or superior heat management. Its MOSFET-type design makes it suitable for a wide range of voltage and current requirements, and it can be easily integrated into existing systems for efficient operation.In addition, the device provides good noise protection from unwanted signals, making it ideal for use in communications systems and other data processing circuitry. Its versatility and low cost make it the go-to choice for many power management, HVAC, and lighting solutions.

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