SQ3419AEEV-T1_GE3

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The SQ3419AEEV-T1_GE3 is a 40V premium N-channel MOSFET, primarily intended for automotive applications. This field-effect transistor utilizes a high-performance trench-structure technology to find application in applications ranging from power management and power conversion to providing power to automotive engine control systems and lighting products. This article provides an overview of the SQ3419AEEV-T1_GE3, including its application fields, working principle, and general features.

Application Fields

The SQ3419AEEV-T1_GE3 is most commonly used in applications such as power management and power conversion, e.g. in applications with high current-voltage range. This device can be used as a switching device in DC-DC converter applications, or as an on-off switch in battery-powered devices. It can also be used as a switch in the power supply for automotive engine control systems, as well as for providing power for automotive lighting products.

The device is also suitable for use in other applications that require a high degree of current handling capability, for instance, in boost converters with a low duty cycle, MOSFET-driven half-bridge switches, or in devices with a fixed voltage level.

Working Principle

The SQ3419AEEV-T1_GE3 is a FET (Field Effect Transistor). It works by controlling the flow of electrons through the channel between the source and drain terminals. When the gate voltage is applied, an electric field is created and the channel gets pinched off. This restricts the flow of electrons and causes current to flow in only one direction. This gate voltage can be used to control the current flow, allowing the device to act as an on-off switch.

The SQ3419AEEV-T1_GE3 utilizes a high-performance trench-structure technology that promotes superior switching time, high current density, and overall improved efficiency. Compared to traditional power MOSFETs, this device has high on-state resistance and low gate charge, allowing for excellent thermal management and reduced power dissipation.

General Features

The general features of the SQ3419AEEV-T1_GE3 include:

• Maximum Drain-Source Voltage (Vdss, TJ = 150°C): 40V
• Drain Current (Ids): 25A
• Average Power Dissipation (TJ = 150°C): 1.9W
• Channel Charge Integration (Vdss, TJ = 150°C): 1.0uC
• High-performance trench-structure technology

The SQ3419AEEV-T1_GE3 is an efficient and reliable field-effect transistor that is ideal for applications requiring high current handling capability and excellent thermal management. It is a popular choice for automotive and other applications requiring a high degree of current carrying capacity.

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