SQ3442EV-T1-GE3 Allicdata Electronics
Allicdata Part #:

SQ3442EV-T1-GE3CT-ND

Manufacturer Part#:

SQ3442EV-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 4.3A 6TSOP
More Detail: N-Channel 20V 4.3A (Tc) 1.7W (Tc) Surface Mount 6-...
DataSheet: SQ3442EV-T1-GE3 datasheetSQ3442EV-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The SQ3442EV-T1-GE3, an enhancement-mode, vertical N-channel, Silicon Gate Field Effect Transistor, is a powerful tool in various applications. It is suitable for switching and amplification applications. In the application field, it is mostly used in low-current, low-voltage, low power integrated circuits, television, and in a variety of light applications.

SQ3442EV-T1-GE3\'s working principle is based on the function of Field-Effect Transistors (FETs). FETs are semiconductor devices that allow us to control the voltage and current in a circuit by varying the amount of electric current flowing across the gate. In the case of an N-Channel FET like the SQ3442EV-T1-GE3, a positive voltage applied to the gate of the FET causes a depletion region to form in the area between the source and drain. This depletion region narrows the flow of electrons from the source to the drain, resulting in decreased current flow.

The SQ3442EV-T1-GE3 can be used for both small signal switching applications such as motor controls and logic circuits, as well as amplification applications such as audio amplifiers. In motor control applications, the N-Channel FET can be used to control the speed and direction of a motor by varying the amount of current allowed to flow through the motor. In audio amplifiers, the SQ3442EV-T1-GE3 can be used to amplify an audio signal voltage by varying the amount of current passing through the speaker.

In terms of fabrication, the FETs like the SQ3442EV-T1-GE3 can be made using a process called ion implantation. This process involves the dynamic implantation of ions such as phosphorus and boron into the channel of the FET. The amount of ions implanted in the channel will determine the size of the depletion region and thus the conduction or current flow through the FET. The size of the FET can also be adjusted during the ion implantation process.

In conclusion, the SQ3442EV-T1-GE3 is a powerful tool for a variety of low-current, low-voltage applications. Its implementation is relatively simple and the technology can be used in both switching and amplification applications. The key to understanding SQ3442EV-T1-GE3 is the use of a depletion region to control the amount of current flow through the circuit.

The specific data is subject to PDF, and the above content is for reference

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