Allicdata Part #: | SQ3426EV-T1_GE3TR-ND |
Manufacturer Part#: |
SQ3426EV-T1_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHANNEL 60V 7A 6TSOP |
More Detail: | N-Channel 60V 7A (Tc) 5W (Tc) Surface Mount 6-TSOP |
DataSheet: | SQ3426EV-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors are an important element of modern electronics, used to control current flow in circuits. SQ3426EV-T1_GE3 are a type of FETs (field-effect transistors). FETs are semiconductor devices composed of three regions: source, drain, and gate. They can be further divided into two types, MOSFETs (metal-oxide-semiconductor field-effect transistors) and JFETs (junction field-effect transistors). SQ3426EV-T1_GE3 is a single type MOSFET.
The most common application of SQ3426EV-T1_GE3 is in power electronics. It is often used in power conversion circuits such as switches, inverters, and rectifiers. Aside from that, they can also be used as voltage and current regulators, voltage multipliers, as well as in other applications.
In more detail, SQ3426EV-T1_GE3 is particularly suited for switching applications, due to its low current on-resistance and high gate capacitance. When the gate potential is low, the device is turned off, while when the gate potential is high, it is turned on. This feature makes it a highly efficient power transistor, allowing for high current applications. It also has a higher voltage breakdown than other types of FETs.
The working principle behind SQ3426EV-T1_GE3 is relatively straightforward. It has a gate electrode that controls the flow of electrons between the source and drain, as well as between the source and gate. The gate electrode is usually made from a metal, such as aluminum or tungsten, or from an oxide or nitride layer. When a voltage is applied between the gate and source terminals, the amount of current that can flow between them is modulated. The higher the voltage, the higher the current, the lower the voltage, the lower the current.
The gate voltage of the SQ3426EV-T1_GE3 can be used to control the drain to source conductance, and therefore the total current that flows between the source and drain. For example, if the gate voltage is increased, the conductance also increases, and more current is allowed to flow. The resistance of the device can also be changed, depending on the gate voltage applied.
SQ3426EV-T1_GE3 is a versatile power transistor, with applications in a variety of fields. Its ability to control current and voltage, as well as its relatively low cost, make it an ideal choice for power electronic and switching applications.
The specific data is subject to PDF, and the above content is for reference
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SQ3418EEV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 8A 6TSOPN... |
SQ3426EEV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 7A 6TSOPN... |
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SQ3427EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CH 60V 6TSOPP-Ch... |
SQ3426EV-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHANNEL 60V 7A 6... |
SQ3419EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CH 40V 7.4A 6TSO... |
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SQ3410EV-T1_GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET N-CH 30V 8A TSOP-6... |
SQ3457EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CHANNEL 30V 6.8A... |
SQ3418EV-T1_GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET N-CHANNEL 40V 8A 6... |
SQ3419AEEV-T1_GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET P-CHANNEL 40V 6.9A... |
SQ3426AEEV-T1_GE3 | Vishay Silic... | 0.21 $ | 1000 | MOSFET N-CH 60V 7A 6TSOP |
SQ3418AEEV-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHANNEL 30V 7.8A... |
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SQ3456BEV-T1_GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 7.8A 6TSO... |
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