SQ3426EV-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQ3426EV-T1_GE3TR-ND

Manufacturer Part#:

SQ3426EV-T1_GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CHANNEL 60V 7A 6TSOP
More Detail: N-Channel 60V 7A (Tc) 5W (Tc) Surface Mount 6-TSOP
DataSheet: SQ3426EV-T1_GE3 datasheetSQ3426EV-T1_GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors are an important element of modern electronics, used to control current flow in circuits. SQ3426EV-T1_GE3 are a type of FETs (field-effect transistors). FETs are semiconductor devices composed of three regions: source, drain, and gate. They can be further divided into two types, MOSFETs (metal-oxide-semiconductor field-effect transistors) and JFETs (junction field-effect transistors). SQ3426EV-T1_GE3 is a single type MOSFET.

The most common application of SQ3426EV-T1_GE3 is in power electronics. It is often used in power conversion circuits such as switches, inverters, and rectifiers. Aside from that, they can also be used as voltage and current regulators, voltage multipliers, as well as in other applications.

In more detail, SQ3426EV-T1_GE3 is particularly suited for switching applications, due to its low current on-resistance and high gate capacitance. When the gate potential is low, the device is turned off, while when the gate potential is high, it is turned on. This feature makes it a highly efficient power transistor, allowing for high current applications. It also has a higher voltage breakdown than other types of FETs.

The working principle behind SQ3426EV-T1_GE3 is relatively straightforward. It has a gate electrode that controls the flow of electrons between the source and drain, as well as between the source and gate. The gate electrode is usually made from a metal, such as aluminum or tungsten, or from an oxide or nitride layer. When a voltage is applied between the gate and source terminals, the amount of current that can flow between them is modulated. The higher the voltage, the higher the current, the lower the voltage, the lower the current.

The gate voltage of the SQ3426EV-T1_GE3 can be used to control the drain to source conductance, and therefore the total current that flows between the source and drain. For example, if the gate voltage is increased, the conductance also increases, and more current is allowed to flow. The resistance of the device can also be changed, depending on the gate voltage applied.

SQ3426EV-T1_GE3 is a versatile power transistor, with applications in a variety of fields. Its ability to control current and voltage, as well as its relatively low cost, make it an ideal choice for power electronic and switching applications.

The specific data is subject to PDF, and the above content is for reference

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