Allicdata Part #: | SQ3419EEV-T1-GE3TR-ND |
Manufacturer Part#: |
SQ3419EEV-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 7.4A 6TSOP |
More Detail: | P-Channel 40V 7.4A (Tc) 5W (Tc) Surface Mount 6-TS... |
DataSheet: | SQ3419EEV-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1065pF @ 20V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SQ3419EEV-T1-GE3 is a field-effect transistor (FET) developed by Toshiba America Electronic Devices, Inc. It combines a MOSFET pass element, logic level driver, and bootstrap diode into a single-package solution. The device is manufactured using Toshiba’s Sulfurized Polysilicon (SP) technology, which offers rugged capabilities, low on-resistance, and low input capacitance. This makes the device suitable for a variety of applications, including AC-DC power conversion, power distribution, AC motor control, and more. In this article, we will discuss the application field and working principle of the SQ3419EEV-T1-GE3.
The SQ3419EEV-T1-GE3 is capable of operating at high frequencies up to 10 MHz making it an excellent choice for high frequency and high efficiency power converters such as AC-DC converters and DC-DC converters. The device also offers low switching losses and supports a wide input voltage range, making it suitable for a variety of applications. Additionally, the device’s built-in logic level driver allows it to be driven directly from low-voltage logic systems, eliminating the need for external logic level converters. Additionally, the device’s integrated bootstrap diode allows it to be used in very fast converters with high ripple requirements.
Now, let’s take a look at the working principle of the SQ3419EEV-T1-GE3. This device is a MOSFET-based pass element with a built-in logic level driver and a built-in bootstrap diode. The device can be driven with a logic signal, for example 5V, which will turn the device ON and OFF according to the logic input. The logic level driver will reduce the voltage drop across the MOSFET and increase the efficiency, as it prevents voltage drops across the gate-drain region, which can increase resistance and reduce efficiency. The integrated bootstrap diode will allow the device to be used in very fast converters with high ripple, as it prevents switching losses. This integrated bootstrap will also help reduce the cost of the device, as external bootstrap diodes are often needed in very fast converters.
In conclusion, the SQ3419EEV-T1-GE3 is an excellent field-effect transistor with a wide range of applications. It can be used in high frequency and high efficiency power converters, AC motor control, and more. The device offers low switching losses and can be driven directly from low-voltage logic systems. Additionally, its integrated logic level driver and bootstrap diode offer additional benefits, such as improved efficiency and reduced cost. All of these features make the device an ideal choice for a variety of power applications.
The specific data is subject to PDF, and the above content is for reference
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