SQ3419EEV-T1-GE3 Allicdata Electronics
Allicdata Part #:

SQ3419EEV-T1-GE3TR-ND

Manufacturer Part#:

SQ3419EEV-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 40V 7.4A 6TSOP
More Detail: P-Channel 40V 7.4A (Tc) 5W (Tc) Surface Mount 6-TS...
DataSheet: SQ3419EEV-T1-GE3 datasheetSQ3419EEV-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SQ3419EEV-T1-GE3 is a field-effect transistor (FET) developed by Toshiba America Electronic Devices, Inc. It combines a MOSFET pass element, logic level driver, and bootstrap diode into a single-package solution. The device is manufactured using Toshiba’s Sulfurized Polysilicon (SP) technology, which offers rugged capabilities, low on-resistance, and low input capacitance. This makes the device suitable for a variety of applications, including AC-DC power conversion, power distribution, AC motor control, and more. In this article, we will discuss the application field and working principle of the SQ3419EEV-T1-GE3.

The SQ3419EEV-T1-GE3 is capable of operating at high frequencies up to 10 MHz making it an excellent choice for high frequency and high efficiency power converters such as AC-DC converters and DC-DC converters. The device also offers low switching losses and supports a wide input voltage range, making it suitable for a variety of applications. Additionally, the device’s built-in logic level driver allows it to be driven directly from low-voltage logic systems, eliminating the need for external logic level converters. Additionally, the device’s integrated bootstrap diode allows it to be used in very fast converters with high ripple requirements.

Now, let’s take a look at the working principle of the SQ3419EEV-T1-GE3. This device is a MOSFET-based pass element with a built-in logic level driver and a built-in bootstrap diode. The device can be driven with a logic signal, for example 5V, which will turn the device ON and OFF according to the logic input. The logic level driver will reduce the voltage drop across the MOSFET and increase the efficiency, as it prevents voltage drops across the gate-drain region, which can increase resistance and reduce efficiency. The integrated bootstrap diode will allow the device to be used in very fast converters with high ripple, as it prevents switching losses. This integrated bootstrap will also help reduce the cost of the device, as external bootstrap diodes are often needed in very fast converters.

In conclusion, the SQ3419EEV-T1-GE3 is an excellent field-effect transistor with a wide range of applications. It can be used in high frequency and high efficiency power converters, AC motor control, and more. The device offers low switching losses and can be driven directly from low-voltage logic systems. Additionally, its integrated logic level driver and bootstrap diode offer additional benefits, such as improved efficiency and reduced cost. All of these features make the device an ideal choice for a variety of power applications.

The specific data is subject to PDF, and the above content is for reference

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