STB40N60M2 Discrete Semiconductor Products |
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Allicdata Part #: | 497-14963-2-ND |
Manufacturer Part#: |
STB40N60M2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 34A D2PAK |
More Detail: | N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount D2... |
DataSheet: | STB40N60M2 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 88 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Generally speaking, the STB40N60M2 is a N-channel, 100V, 40A power MOSFET (metal-oxide-semiconductor field-effect transistor). Such a component has a wide range of applications, from power conversion to motor control. In this article, we will discuss the application field and the working principle of the STB40N60M2.Applications of STB40N60M2The STB40N60M2 can be used in numerous power applications, from power conversion to motor control. Specifically, it is well-suited for applications such as switching power supplies, UPS systems, motor drives, lighting ballast, and power converters. It is especially useful in systems that require high efficiency, fast switching, and high peak load currents.Working principle of STB40N60M2The STB40N60M2 is a high-speed, N-channel, power MOSFET, enabled through a thin-film gate oxide layer. The MOSFET works by using an electric field to allow or prevent current flow between the gate, source and drain. When the gate voltage is zero, the MOSFET is off, meaning there is no current flow from the source to the drain. When the gate voltage is positive, the MOSFET is on, meaning there is current flow from the source to the drain. The current flow is controlled by the gate voltage, making the MOSFET highly efficient and fast-switching.ConclusionIn conclusion, the STB40N60M2 is a N-channel, 100V, 40A power MOSFET, suitable for multiple power applications from power conversion to motor control. It uses an electric field to control the current flow from the source to the drain, making it highly efficient and fast-switching.The specific data is subject to PDF, and the above content is for reference
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