STB4NK60ZT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-2486-2-ND |
Manufacturer Part#: |
STB4NK60ZT4 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 4A D2PAK |
More Detail: | N-Channel 600V 4A (Tc) 70W (Tc) Surface Mount D2PA... |
DataSheet: | STB4NK60ZT4 Datasheet/PDF |
Quantity: | 6000 |
1000 +: | $ 0.46144 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STB4NK60ZT4 is a state-of-the-art power metal oxide semiconductor field effect transistor (MOSFET). It has the unique combination of good switching performance, low on-resistance, excellent behavior in avalanche and dV/dt-induced turn-on and a wide range of voltage ratings. It offers the most efficient and reliable solution for high power applications. It can be used in power supplies, UPS, SMPS, motor controls, welders and motor drives as well as in high-power converters and rectifiers.
The STB4NK60ZT4 is composed of an internal Gate Oxide and drain-source junction, both of N-channel design, making it well-suited for a variety of applications. With a low gate-to-source voltage and drain-to source voltage, it is capable of high-impedance operation demanding high-speed switching. Furthermore, it can utilize lower gate-source capacitance which minimizes power losses due to current leakage.
The working principle of the STB4NK60ZT4 is based on the same principle as any MOSFET; it uses the electric field between the drain and the source to control the current flow between them. Additionally, its particular design provides protection against destructive current and voltage conditions, ensuring reliable operation. When an electric field is applied across the gate – source terminal, corresponding surface attracted charges create a channel between the drain and the source, allowing the current to flow.
To reduce the on-state resistance in the STB4NK60ZT4, a second channel, called the channel channel, is used. This is another area defined by the gate-source voltage which allows more current to flow as the voltage is increased, thus reducing the on-state resistance. The current limiting regime also has the advantage of protecting the device against short-circuit, overload and transient dV/dt induced currents.
The STB4NK60ZT4 offers excellent switching performance, due to its capacitive gate-to-source voltage, low gate-source capacitance, low on-state resistance, excellent behavior in avalanche and dV/dt-induced turn-on. It is also tolerant to temperature and humidity, making it ideal for a variety of applications. With its wide range of voltage ratings, it is suitable for almost any high-power application, from AC-DC and DC-DC converters to motor drives and welders.
The STB4NK60ZT4 is an ideal choice for high-power applications. Its internal construction is optimized to reduce on-state resistances and it can handle a wide range of voltage and current applications. Furthermore, its capacitive gate-to-source voltage, low gate-source capacitance, and excellent behavior in avalanche and dV/dt-induced turn-on make it suitable for a variety of applications, from power supplies and UPS systems, to motor drives and welders.
The specific data is subject to PDF, and the above content is for reference
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