STB43N60DM2

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Power Metal Oxide Semiconductor Field-Effect Transistors (Power MOSFETs) are used to amplify signals caused by electric current and control power switching circuits. The STB43N60DM2 is a Power MOSFET designed specifically to handle higher power levels in a variety of low-frequency applications. For example, in power supplies, converters, motor controllers and DC-DC converters, this device can help to control high-current circuits with high power levels.

The STB43N60DM2 has an operating voltage of 600V, with a drain current of 108A, and a maximum power dissipation of up to 250 W. It features a built-in soft recovery with an easy-to-control gate drive circuit. It also features an optimized self-solderable source strap that greatly simplifies the assembly process and allows for improved solderability. The device also has a diagonal ESD protection diode, which adds extra protection for the gate drive circuitry.

The STB43N60DM2 is a TO-220F device that features a double-sided cooling tab. This cooling tab adds extra area for thermal dissipation and helps to reduce the junction temperature. The device also has high source and drain breakdown voltage (BVdss) of 650V and a channel charge (Qg) of 110 nC. These features make the STB43N60DM2 a suitable choice for applications requiring high-current handling with low-power levels.

The STB43N60DM2 is primarily used to control power switch circuits, particularly in low-frequency applications. By controlling the current flow, this device can be used to switch between different operating modes. At the same time, it can also be used to protect circuits against overcurrents. When using this device, the gate-source voltage (Vgs) must be above 10 V for normal operation and no more than 5 V for "Latch-off."

The STB43N60DM2 also features an integrated protection circuit to protect against damages in case of a short circuit. The protection circuit uses a combination of features such as integrated reverse-bias gate current and temperature sensing. The device also features an adjustable gate-to-source delay time and gate pulse width.

In order for the device to operate properly, the junction temperature should be kept below 170°C. To ensure an optimal operating temperature, the device should be properly mounted on a heat sink with thermal paste. It is also important to ensure that the gate drive voltage is at the right level to prevent accidental triggering of the latch-off protection.

The STB43N60DM2 is an ideal choice for applications that require low-frequency operation and efficient power switching. The device is designed to provide superior scalability, allowing it to handle higher power levels while maintaining its low on-resistance. It also offers a wide range of features, such as protection against current overloads, low thermal resistance, and adjustable gate delays and pulse widths. These features make the STB43N60DM2 an ideal choice for a variety of low-frequency applications.

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