STB47N60DM6AG Discrete Semiconductor Products

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The STB47N60DM6AG is an advanced N-channel silicon carbide power MOSFET. It’s a type of transistor that operates by controlling the movement of electrons (or “flow”) of electrical current between terminals, allowing a smaller current flow in one direction while blocking all flow in the opposite direction. The silicon carbide material significantly reduces the operational temperature, allowing this MOSFET to be used in applications where high-temperature operation is needed.

This device is highly energy-efficient and has a wide operating temperature range. It features a low “on” resistance, making it ideal for high-frequency operations and fast switching speeds. It is also robust, making it applicable for use in demanding industrial applications. Furthermore, the device has an ultra-low “body leakage” or “body effect”, meaning that its spread of current is consistent across the device, making it less susceptible to changes in temperature or any other environmental factors.

The basic working principle of the STB47N60DM6AG is that electrical current is blocked in the opposite direction when a low voltage is applied to the gate terminal. When the voltage on the gate terminal is increased, current flows through the device and in the direction determined by the other terminals. The device is also able to switch off the current when the voltage on the gate drops below a specific level.

The STB47N60DM6AG is suitable for application in many different industries, particularly in the power supply industry. For example, the device can be used in switching supplies and amplifier circuits, high-temperature motor controllers, high-efficiency AC-DC converters, and many other types of power supply applications. In addition, it can be used to control the on and off states of various electrical components in industrial control systems.

Overall, the STB47N60DM6AG is a highly advanced MOSFET that is suitable for many different applications. It features low energy coupling loss, low gate charge, and low total gate capacitance. It is highly energy-efficient and robust, making it ideal for power supply circuits and industrial control systems. Moreover, it operates at a higher efficiency at higher temperature, making it suitable for high-temperature applications.

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