STB45N60DM2AG Discrete Semiconductor Products

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The STB45N60DM2AG is a stainless steel insulated gate bipolar transistor (IGBT) module manufactured by STMicrolectronics. It is designed for high-power applications and contains two N-channel and two P-channel IGBTs of equal voltage rating. It is used in applications such as adjustable speed drives, UPS systems, automobile systems, lighting, and welding systems.

The STB45N60DM2AG has a maximum collector-to-emitter voltage of 600V and a maximum collector current of 45A. It has a breakdown voltage over temperature of greater than 1.5kV. This high voltage and current handling capacity make it an ideal choice for applications requiring great power and temperature ranges.

The STB45N60DM2AG is a field-effect transistor (FET) device. It consists of three terminals-source, gate, and drain-that control the current flow of the device. In a FET, the current flow is controlled by applying a voltage to the gate terminal.

The STB45N60DM2AG is a single MOSFET, which means that it has a single layer of gate oxide. This allows for higher switching speeds and better efficiency compared to double or triple MOSFET devices. The single layer also reduces the leakage current between the drain and source junctions.

The STB45N60DM2AG also has a low on-state resistance. This means that the power dissipation is reduced, resulting in greater efficiency. The device has a high current density, meaning that it can handle more current per unit area than other similar devices. This makes it an ideal choice for applications where space is limited.

The STB45N60DM2AG offers excellent protection features such as reverse avalanche diodes, Freon thermistors, temperature fuses, and overvoltage protection. It also has a high safe operating area (SOA) capability, which ensures high reliability.

The STB45N60DM2AG can be used in a wide variety of applications, such as adjustable speed drives, UPS systems, automobile systems, lighting, and welding systems. Its wide voltage and current range make it suitable for a variety of high-power applications. The device’s low on-state resistance makes it energy-efficient, while its high-current capacity makes it robust and reliable. Its superior protection features provide added safety and its high SOA capability ensures high reliability. The STB45N60DM2AG is an excellent choice for applications that require high-power, high-efficiency, and reliability.

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