STB4NK60Z-1

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	70W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	510pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Series:	SuperMESH™
Rds On (Max) @ Id, Vgs:	2 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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Introduction

The STB4NK60Z-1 is a single MOSFET (metal oxide semiconductor field-effect transistor) which is specifically designed for use in automotive systems. This MOSFET is capable of handling high electrical current and switching voltages up to 600V, making it ideal for a variety of applications such as DC/DC converters, alternators, lighting, and other automotive applications. The STB4NK60Z-1 is composed of various components including the gate, drain, and source. It can be used as either a power switch or as a linear amplifier, depending on the circuit configuration it is used in.

Application Field

The STB4NK60Z-1 is used in a variety of automotive applications, including DC/DC converters, alternators, lighting, motors, and other areas where high electrical current and switching voltage is required. The primary benefit of using this MOSFET is its high switching speed, which allows for high-speed switching with minimal losses. This MOSFET is also designed for use s in high-temperature environments and has excellent temperature stability and long-term reliability.In addition to automotive applications, the STB4NK60Z-1 can also be used in various industrial applications. This MOSFET is capable of switching currents of up to 1,500 Amps, making it suitable for applications such as welding, power switching, and power supply control. The STB4NK60Z-1 is also used in high-frequency HVAC systems, as it is able to handle large amounts of voltage and current.

Working Principle

The STB4NK60Z-1 is a single MOSFET which is composed of various components including the gate, source, and drain. The gate is used to control the current flow through the device, the source is used to provide the incoming current, and the drain is used to lead away the outgoing current. The strength of the current is determined by the voltage and current applied to the gate.When the gate voltage is greater than a certain threshold, the MOSFET actively conducts current from the source to the drain terminals. This process of conducting current is known as “ON” state, and when the voltage is lower than the threshold, the MOSFET does not actively conducts current and is in “OFF” state. The amount of current flowing through the MOSFET is referred to as its on-state current.Various factors can affect the STB4NK60Z-1’s performance and its on-state current, such as temperature, voltage, and gate voltage. In order to ensure reliable operation, it is important to select the appropriate components and to ensure that they are properly configured before installing the MOSFET.

Conclusion

The STB4NK60Z-1 is a single MOSFET which is specifically designed for use in automotive and industrial applications. This MOSFET is ideal for applications which require high switching speeds, high electrical current, and switching voltage up to 600V. The STB4NK60Z-1 is composed of a gate, source, and drain which are used to control the flow of current. The current flowing through the MOSFET is affected by various factors such as temperature, voltage, and gate voltage, and it is important to ensure that they are properly configured before installing the MOSFET.

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