STB42N65M5 Discrete Semiconductor Products

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The STB42N65M5 is a family of low-voltage, N-channel MOSFET that has been designed for use in applications such as DC/DC converters, low-noise power amplifiers, voltage regulators, motor drives, and point-of-load converters. The STB42N65M5 is available in small SOIC-8 or DPAK packages, allowing for design flexibility and cost savings. This article will discuss the application fields of the STB42N65M5 and the working principle of an N-channel MOSFET.

The STB42N65M5 is an enhancement-mode power MOSFET featuring a 50V drain to source voltage (VDS) and a 500mΩ maximum on-resistance (RDS(on)). It also features a high-voltage gate source breakdown voltage (BVGS) of 20V and an ultra-low on-resistance Celsius temperature coefficient (TempCo), resulting in accurate, high-efficiency power management. With a low quiescent current (Iq) and ESD rating of 8kV HBM, the STB42N65M5 offers excellent system level protection and high-power density.

The STB42N65M5 can be used in a variety of applications, such as DC/DC converters, low- noise power amplifiers, voltage regulators, motor drives, and point-of-load converters. The STB42N65M5 is ideal for use in applications that require low losses and high current density, such as cellular base stations, digital broadcast systems, and medical equipment. The MOSFET’s low output capacitance, combined with its low self-heating and small size, makes it ideal for designs requiring a higher switching frequency. Furthermore, the device is available in a variety of packages, ranging from SOIC8 to TO-252, allowing designers to optimize their circuits for size and cost.

The STB42N65M5 is an N-channel enhancement MOSFET, meaning it is a type of insulated-gate field-effect transistor that consists of a source, a drain, and a gate. The working principle of the device is based on the fact that when the voltage on the gate is higher than the voltage on the source (Vgs > Vss), the channel between the source and the drain is turned on and current can flow from the source to the drain. Conversely, when the voltage on the gate is lower than the voltage on the source (Vgs < Vss), the channel between the source and the drain is turned off and no current can flow from the source to the drain.

In order for the STB42N65M5 to operate properly, it must be properly biased and protected from excessive currents. The device must be biased so that the voltage across it is within its specified operating region. This can be accomplished by connecting a sufficiently large gate resistor, or gate source capacitor (GS Capacitor), between the gate and source terminals of the device. The gate source capacitor helps protect the device from high voltages, while the gate resistor helps limit current and helps prevent the device from being overdriven.

In summary, the STB42N65M5 is an enhancement-mode, N-channel MOSFET that is perfectly suited for use in DC/DC converters, low-noise power amplifiers, voltage regulators, motor drives, and point-of-load converters. The device is available in a variety of packages, and its low quiescent current and high-voltage gate source breakdown voltage make it ideal for applications requiring a high degree of efficiency and power management. Additionally, the device’s source to drain channel must be properly biased and protected in order for the device to operate correctly.

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