STB45N50DM2AG Discrete Semiconductor Products |
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Allicdata Part #: | 497-16134-2-ND |
Manufacturer Part#: |
STB45N50DM2AG |
Price: | $ 2.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 35A |
More Detail: | N-Channel 500V 35A (Tc) 250W (Tc) Surface Mount D2... |
DataSheet: | STB45N50DM2AG Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.87645 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | Automotive, AEC-Q101, MDmesh™ DM2 |
Rds On (Max) @ Id, Vgs: | 84 mOhm @ 17.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STB45N50DM2AG Application Field and Working Principle
The STB45N50DM2AG is a single, Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from STMicroelectronics. It is a high voltage and power Power MOSFET that features a low on-resistance and can operate at a drain to source voltage up to 500V. The STB45N50DM2AG is suitable for applications in both AC and DC mains and inverter circuits, where its low on-resistance brings the lowest RDS(on) feature to reduce losses in switching applications. It is also suitable for use in high-efficiency current-mode buck and boost converters.
Applications
- AC/DC mains and inverter circuits
- High speed switching applications
- Power management in motor control applications
- Lighting applications
- Industrial and medical equipments
- Automotive solutions
Features
- High voltage and power..
- Low on-resistance.
- Operates up to 500V.
- Low switching losses.
- High speed switching.
- Easy to use.
- High efficiency.
- High reliability.
Working Principle
At its most basic, a MOSFET is an electronic switch that is capable of controlling and switching large currents or voltage. The STB45N50DM2AG is a n-channel type MOSFET, which consists of three terminals: Gate, Source and Drain. During operation, the Gate terminal acts as a control input and when a positive voltage is applied, it causes a “channel” to form between the Source and Drain. This channel is governed by the gate-source voltage (VG), and this voltage is used to control the current flow from the Drain to the Source. If the VG is high enough, current can flow from the drain to source, and if it is low, current cannot flow.
The STB45N50DM2AG MOSFET has a current rating of 45A, meaning it can handle currents up to 45A safely. The main advantage of using a MOSFET instead of other switching devices is that it has a very low RDS (drain-to-source On-resistance). This low RDS reduces current losses and increases energy efficiency.
Conclusion
The STB45N50DM2AG is a high voltage and power MOSFET that is suitable for a variety of applications such as AC/DC mains and inverter circuits, high speed switching applications, power management in motor control applications, lighting applications and a variety of industrial and medical applications. The STB45N50DM2AG features a low on-resistance and can operate up to 500V, and has a current rating of 45A, allowing it to handle higher current levels safely. It is also capable of providing high efficiency and high speed switching due to its low RDS.
The specific data is subject to PDF, and the above content is for reference
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