STB47N50DM6AG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STB47N50DM6AG is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) featuring advanced high withstand voltage (HV) technology, high-speed performance, and low gate-charge. As a single device, it is more suitable for many applications than other single MOSFETs. In this article, we will discuss key application fields and working principles of the STB47N50DM6AG MOSFET.

Application Field

The STB47N50DM6AG MOSFET is mainly used in applications requiring high voltage and high speed performance, such as power management, motor drive, high voltage switching, high frequency converters, high voltage amplifiers, etc. It is particularly suitable for use in these fields due to its ability to deliver high voltage, high performance, and low gate-charge. In addition, the low on-resistance of the STB47N50DM6AG supports high power levels, making it suitable for high power devices. Furthermore, its high load capacity and low thermal resistance ensures the device can withstand short duration, high current inrush.

Working Principle

The STB47N50DM6AG MOSFET works in the same way as other MOSFET devices – through the application of a small voltage across its gate terminals to control current flow. The device has a p-type channel which acts as the source, and an n-type channel which acts as the drain. When a voltage is applied to the gate terminal, a negative voltage is created at the gate’s gate-source junction. This negative voltage attracts the positive charge carriers in the p-type channel, allowing them to flow across the channel towards the gate terminal. As a result, the channel between source and drain becomes conductive, allowing current to flow through the device.

When the voltage applied to the gate terminal reaches a certain threshold, the STB47N50DM6AG MOSFET begins to produce an electric current between the source and drain of the device. This current is known as the ‘gate current’, and the gate voltage required to produce this current is known as the ‘gate threshold voltage’. The gate threshold voltage varies from device to device, but is typically between 2.0V and 3.0V for the STB47N50DM6AG. This makes it suitable for use in many everyday applications.

Once the gate current is passed through the device, it causes a reaction resulting in the formation of a “depletion region” at the p-type channel. This forms a barrier between the source and the drain, meaning that no current can flow through the device until the gate voltage is increased again. This makes the STB47N50DM6AG suitable for use as a high voltage switch since it can be turned off easily by reducing the gate voltage.

Conclusion

The STB47N50DM6AG MOSFET is an advanced device which offers high voltage, high speed performance, and low gate-charge. It is ideally suited for many applications requiring high voltage, such as power management, motor drive, high voltage switching, high frequency converters, high voltage amplifiers, etc. It works by allowing current to flow through the device when a voltage is applied to the gate terminal, which causes a reaction resulting in the formation of a “depletion region”. This means the device can easily be turned off by reducing the gate voltage.

The specific data is subject to PDF, and the above content is for reference