STB42N60M2-EP Discrete Semiconductor Products

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STB42N60M2-EP is a power MOSFET chip from STMicroelectronics, which is designed for high speed, high power applications. This chip is a high-voltage, high-current, N-channel enhancement-mode Power MOSFETs suitable for high-current applications such as switched-mode power supplies, power converters and DC/DC converters.

The STB42N60M2-EP employs a Chip-on-Chip (CoC) architecture, which feature a vertical DMOS process that provides both better thermal and electrical performance than traditional lateral PowerMOSFET. It offers a low on-resistance RDS(on) with low gate charge, and is capable of switching 100—1000V, 10A—210A maximum drain current.

The working principle of STB42N60M2-EP is a transistor action in which a voltage applied to the gate causes a change in the current flowing between two terminals connected by the gate. The main components inside the STB44N60M2-EP are two Metal-Oxide Semiconductor Field Effect Transistors (MOSFETs). A MOSFET utilizes the gate voltage to control the flow of current between source and drain. The gate voltage causes an electric field which attracts the electrons, allowing a current to flow between source and drain. The gate voltage serves as a control voltage, which can be used to turn on or turn off the transistor. The maximum power dissipation of STB44N60M2-EP is about 28.4W.

The main application of STB44N60M2-EP Power MOSFET is mainly in switched-mode power supplies, DC/DC converters and motor drivers. It is also suitable for many other high current applications. They are widely used in applications like power converters, power supplies, motor drivers, voltage regulators and power factor correction. Additionally, STB44N60M2-EP can be used for a variety of applications, including variable speed drives, electric vehicle charging, solar inverters and electric power management systems. The ability to manage the current flow makes it ideal for high power systems and improves their efficiency and reliability.

In conclusion, the STB42N60M2-EP is a high-voltage, high-current, N-channel enhancement-mode Power MOSFET chip with low on-resistance RDS(on), low gate charge and high power dissipation. It is designed to operate in high-current applications such as switched-mode power supplies, power converters and DC/DC converters. It can also be used for other applications such as motor drivers, power factor correction, solar inverters and electric vehicle charging. With its efficient performance and reliable operation, STB42N60M2-EP can be used for many high power systems.

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