STB41N40DM6AG Discrete Semiconductor Products

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STB41N40DM6AG Field of Application and Working Principle

The STB41N40DM6AG is a super-junction MOSFET, designated as a N-Channel enhancement mode MOSFET device, manufactured with ST Microelectronics high voltage Silicon-on-Insulator (SOI) technology. It is a multi-function device, which is used in a variety of applications.

MOSFET stands for Metal-Oxide-Semiconductor Field Effect Transistor, and refers to transistors that are designed for a number of purposes, such as being used as amplifiers, switches or voltage regulators. SOI refers to the layer of silicon oxide that is used to insulate the transistor from the substrate, allowing for higher voltages and improved efficiency.

STB41N40DM6AG Field of Application

The STB41N40DM6AG is a super junction design that can be used for a variety of purposes. It is typically used in the automotive industry due to its ability to switch high voltages but can also be used in a variety of other applications. Some of these applications include:

• Motor control applications;
• Secondary side power converters;
• UPS UPS, DC to DC converters, and solar systems;
• Negative and positive bus regulation modules;
• High efficiency DC/DC converters and SMPS;
• Input rectifier stage in intermediate bus converter.

The STB41N40DM6AG is designed with a guaranteed breakdown voltage of 700V, therefore making them an ideal choice for these high voltage applications. Additionally, the low turn-on resistance of the STB41N40DM6AG allows for improved energy efficiency.

STB41N40DM6AG Working Principle

The STB41N40DM6AG is an N-Channel enhancement mode design, meaning that the transistor is shut off, or conducting no current, at zero applied Gate-Source voltage. When the voltage applied to the Gate-Source is greater than the threshold voltage of the device, the transistor turns on and begins to conduct current, resulting in a high power gain and improved efficiency.

The STB41N40DM6AG is also equipped with body-diode protection, which protects the device from over-voltage events. The body diode is an intrinsic diode formed between the drain and the source of the device, which switches on when the voltage applied to the Gate-Source is less than the threshold voltage. It prevents an overvoltage event from damaging the device.

The STB41N40DM6AG is also equipped with an improved thermal design, enabling it to operate in higher temperature environments without suffering a performance penalty. The device is capable of withstanding accelerated life testing with a junction temperature beyond 150°C.

Conclusion

The STB41N40DM6AG is a special MOSFET device, designed for a variety of applications where a high voltage is required. It is capable of withstanding high voltages, has low turn-on resistance, intrinsic body diode protection and an improved thermal design, which makes it an excellent choice for a variety of applications.

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