
Allicdata Part #: | 497-7957-2-ND |
Manufacturer Part#: |
STD10NM65N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 9A DPAK |
More Detail: | N-Channel 650V 9A (Tc) 90W (Tc) Surface Mount DPAK |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD10NM65N is a voltage-controlled semiconductor device based on the insulated-gate field-effect transistor (IGFET) principle. The device is fabricated by an advanced silicon-gate CMOS process that delivers excellent static and dynamic performance in both flexible power and low-power applications. It has low on-state resistance, fast switching speed, and low gate drive power.
The STD10NM65N series is a field-effect transistor (FET) that is normally used as a switch or an amplifier in electronic systems. It is a type of insulated-gate field-effect transistor (IGFET) and is made using a silicon-gate CMOS process, which gives it excellent static and dynamic performance and low gate drive power. It is ideal for use in either flexible power or low-power applications.
The major advantage of the STD10NM65N device is its low on-state resistance, which allows it to switch quickly and efficiently. This device has a threshold voltage of 6.5 volts and a breakdown voltage of 8.4 volts, so it is suitable for powering larger loads and for use in systems that require high switching speed. The device is available in a variety of packages and comes in either N or P configurations.
The STD10NM65N device is usually used as a switch when the gate voltage is lower than the threshold voltage and the channel is shut off. When the gate voltage rises above the threshold voltage, the channel opens and the drain current flows. This process is commonly referred to as “enhancement-mode” operation. The device can also be used as an amplifier if the gate voltage is higher than the threshold voltage. This process is referred to as “depletion-mode” operation.
In addition to being used as a switch or an amplifier, the STD10NM65N can also be used to regulate current levels. When the drain current IA is lower than the current limit ID, the voltage at the source will increase. When the drain current IA exceeds the current limit ID, the source voltage will drop. This process is referred to as “current-limiting” or “current-following” operation.
The STD10NM65N is a versatile and reliable device that is ideal for various applications. It can be used in switching applications, for power regulation and conversion, and for current control. This device is also suitable for use in applications that require high speed switching, such as audio and video switching, automotive electronics, and wireless communications.
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