Allicdata Part #: | 497-10020-2-ND |
Manufacturer Part#: |
STD12NM50ND |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 11A DPAK |
More Detail: | N-Channel 500V 11A (Tc) 100W (Tc) Surface Mount DP... |
DataSheet: | STD12NM50ND Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 1.21894 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A transistor is an electrical device used to amplify or switch electrical signals, typically composed of semiconductor materials. It can be used either as an amplifier or as a switch. Transistors are generally divided into two categories: Bipolar Junction Transistors (BJTs) and Field Effect Transistors (FETs). BJTs are the most common type of transistors and have three terminals: base, collector and emitter. FETs have four terminals and can be divided into three different types depending on the materials used: junction field effect transistor (JFET), metal oxide semiconductor field effect transistor (MOSFET) and metal semiconductor FET (MESFET).
The STD12NM50ND is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which belongs to the Single category, and is specifically designed for load switching applications. It is a very common form of power MOSFET because it has excellent electrical characteristics, high performance and is easy to use. The STD12NM50ND is capable of maintaining high switching speeds and low on-state resistance over a wide temperature range. It is also quite robust and can withstand relatively high voltages.
The working principle of a MOSFET is fairly straightforward. It is essentially composed of three terminals: the gate, which is used to modulate the electrical signals; the source, which is the pathway for electrons to travel; and the drain, which is where the electrons are collected. The MOSFET operates in two modes: the enhancement mode and the depletion mode. When the gate is exposed to a positive voltage, electrons will be attracted to the gate and the device will be turned ON. This is the enhancement mode, which is used to amplify electrical signals. On the other hand, when the gate is exposed to a negative voltage, electrons are repelled from the gate and the device will be turned OFF. This is the depletion mode, which is used to switch electrical signals.
In the STD12NM50ND application field, this MOSFET is commonly used to switch power between high power devices.It is also frequently used in switching circuits, such as those found in computers, home appliances and the likes. The STD12NM50ND has a wide switching range, making it suitable for both low-power and high-power switch circuits. Additionally, its low on-state resistance, high breakdown voltage and high voltage capability make it suitable for various applications, such as power supplies, audio amplifiers, switched mode and other power electronic applications. Additionally, the STD12NM50ND provides superior transient performance and fast switching times, due to its high maximum current rating and low input capacitance.
To summarize, the STD12NM50ND is a type of single MOSFET that is specifically designed for load switching applications.It has excellent electrical characteristics, high performance and is easy to use. It is commonly used to switch power between high power devices, switching circuits and power supplies. It is capable of providing superior transient performance and fast switching times, due to its high maximum current rating and low input capacitance.
The specific data is subject to PDF, and the above content is for reference
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